z
Collector Current: I
C
=1A
ELECTRONICS CO.,LTD
HUAXUANYANG HXY
NPN Plastic-Encapsulate Transistors
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD
Power Dissipation of 1.5w
E
B
C
z
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
BCP54
SOT89-3LBCP54
1000
FEATURES
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
BCP54,55,56
BCP55
SOT89-3LBCP55
1000
BCP56
SOT89-3LBCP56
1000
Parameter Symbol Limit Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Jun
ction Temperature
Storage Temperature
V
CBO
V
CE
O
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
45
45
5
1
1.5
83.3
150
-55～+150
V
V
V
℃/W
℃
℃
A
W
BCP54
BCP56
BCP55
BCP56
100
60
BCP55
BCP54
60
80
BCP56
SOT89-3L
B
C
E
ELECTRONICS CO.,LTD
HUAXUANYANG HXY
NPN Plastic-Encapsulate Transistors
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD
Typical Characteristics
a
T =25
unless otherwise specified
Par
ameter
Symbol Test conditions Min Max Unit
Collector-base breakdown voltage BCP54
BCP55
BCP56
V
(BR)CBO
I
C
= 0.1mA,I
E
=0
45
60
100
V
Collector-emitter breakdown voltage BCP54
BCP55
BCP56
V
(BR)CE
O
I
C
= 10mA,I
B
=0
45
60
80
V
Base-emitter breakdown voltage
V
(BR
)EBO
I
E
= 10μA,I
C
=0 5 V
Collector cut-off current
I
CBO
V
CB
= 30 V, I
E
=0 100 nA
h
FE(1)
V
CE
= 2V, I
C
=5mA 25
h
FE(2)
V
CE
= 2V
, I
C
=150m A 63
250
DC current gain
h
FE(3)
V
CE
= 2V, I
C
=500m A 25
Collecto
r-emitter saturation voltage
V
CE(sat)
I
C
=500mA,I
B
=50mA 0.5 V
Base-emitter voltage
V
BE
V
CE
=2V, I
C
=500m A 1 V
Transition frequency
f
T
V
CE
=10V
,I
C
=5
0mA,f=100MHz 100 MHz
BCP54,55,56