Description
can be used in various power
Application
●
General Features
V
DS
= 650V,I
D
=7A
R
DS(ON)
< 1.4Ω@ V
GS
=10V
Power switch circuit of adaptor and charger.
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol Parameter Rating Units
VDS Drain-Source Voltage 650 V
VGS Gate-Source Voltage +30 V
I
D
@T
C
=25℃
Drain Current, V
GS
@ 4.5V
7
A
I
D
@T
C
=100℃
Drain Current, V
GS
@ 4.5V 4.4 A
IDM Pulsed Drain Current
1
28 A
P
D
@T
C
=25℃
Total Power Dissipation 100 W
E
AS
Single Pulse Avalanche Energy
4
350 mJ
TSTG
Storage Temperature Range -45 to 125
℃
T
J
Operating Junction Temperature Range -45 to 125
℃
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PIN2 D
PIN1 G
PIN3 S
N-Channel MOSFET
HXY7N65D
ELECTRONICS CO.,LTD
Silicon N-Channel Power MOSFET
HUAXUANYANG HXY
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD
TO -2
252
L
D
G
S
Package Marking and Ordering Information
Product ID Pack Marking Qty(PCS)
TO252-2L 2500
HXY7N65D 7N65 XXX YYYY
HXY7N65D
swithching circuit for system miniaturization and
higher efficiency.The package form is TO-252-2L,
which accords with the RoHS standard.
The
ELECTRONICS CO.,LTD
HUAXUANYANG HXY
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD
Silicon N-Channel Power MOSFET
Electrical Characteristics（T
J
= 25℃ unless otherwise specified ）：
OFF Characteristics
Symbol
Parameter Test Conditions
Rating Unit
s
Min. Typ. Max.
V
DSS
Drain to Source Breakdown Voltage
V
GS
=0V, I
D
=250µA
650 -- --
V
ΔBV
DSS
/ΔT
J
Bvdss Temperature Coefficient
ID=250uA,Reference25℃
-- 0.7 --
V/℃
I
DSS
Drain to Source Leakage Current
V
DS
=650V, V
GS
= 0V,
T
J
= 25℃
-- -- 1
µA
V
DS
=520V, V
GS
= 0V,
T
J
= 125℃
-- -- 100
µA
I
GSS(F)
Gate to Source Forward Leakage
V
GS
=+30V
-- -- 100
nA
I
GSS(R)
Gate to Source Reverse Leakage
V
GS
=-30V
-- -- -100
nA
ON Characteristics
Symbol
Parameter Test Conditions
Rating
Units
Min. Typ.
R
DS(ON)
Drain-to-Source On-Resistance
V
GS
=10V,I
D
=3.5A
-- 1.2 Ω
V
GS(TH)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
2.0 --
Max.
1.4
4.0 V
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
Parameter Test Conditions
Rating
Units
Min. Typ. Max.
g
fs
Forward Transconductance
V
DS
=15V, I
D
=3.5A
-- 6.5 -- S
C
iss
Input Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
-- 1130 --
pF C
oss
Output Capacitance
-- 93 --
C
rss
Reverse Transfer Capacitance
-- 5.5 --
Resistive Switching Characteristics
Symbol
Parameter Test Conditions
Rating
Units
Min. Typ. Max.
t
d(ON)
Turn-on Delay Time
I
D
=7A V
DD
= 325V
R
G
=10Ω
-- 19 --
ns
tr
Rise Time
-- 21 --
t
d(OFF)
Turn-Off Delay Time
-- 42 --
t
f
Fall Time
-- 19 --
Q
g
Total Gate Charge
I
D
=7A V
DD
=520V
V
GS
= 10V
-- 24 --
nC Q
gs
Gate to Source Charge
-- 5.1 --
Q
gd
Gate to Drain (“Miller”)Charge
-- 9.5 --
HXY7N65D