Parameter Symbol Test conditions Min Typ Max Unit

Co

llector-base breakdown voltage

V

(B

R)CBO

I

C

=

100μA, I

E

=0 40

V

Co

llector-emitter breakdown voltage

V

(B

R)CEO

I

C

=

0.1mA, I

B

=0 25

V

Emitter-b

ase breakdown voltage

V

(

BR)EBO

I

E

=

100μA, I

C

=0 5

V

Co

llector cut-off current

I

CB

O

V

CB

=

40V, I

E

=

0 0.1 μA

Co

llector cut-off current

I

CE

O

V

CE

=

20V, I

E

=

0 0.1 μA

Emitter cut-off current

I

EBO

V

EB

= 5

V, I

C

=

0 0.1 μA

h

FE(1)

V

CE

=1

V, I

C

=

100mA 120 400

DC cu

rrent gain

h

FE(2)

V

CE

=1

V, I

C

=

800mA 40

Co

llector-emitter saturation voltage

V

CE

(sat)

I

C

=

800mA, I

B

=

80mA 0.5 V

Bas

e-emitter saturation voltage

V

BE(

sat)

I

C

=

800mA, I

B

=

80mA 1.2 V

T

ransition frequency

f

T

V

CE

=

10V, I

C

=

50mA,

f=30MHz

100

MHz

Co

llector output capacitance

C

ob

V

CB

=

10V,I

E

=

0,f=1

MHz

15 pF

Symbol Parameter Value Unit

V

CBO

Collector-Base Voltage 40

V

V

C

EO

Collector-Emitter Voltage 25

V

V

E

BO

Emitter-Base Voltage 5

V

I

C

Collector Current 1.5 A

P

C

C

ollector Power Dissipation 250 mW

R

ΘJ

A

Thermal Resistance From Junction To Ambient

500 ℃/W

T

j

Junction Temperature 150

℃

T

s

tg

Storage Temperature

-55～+150 ℃

■

Simplified outline(SOT-323)

1

2

3

NPN Transistors

1.Base

2.Emitter

3.Collector

■ Absolute Maximum Ratings Ta = 25℃

■ Electrical Characteristics Ta = 25℃

RANK

R

ANGE 200–350

M

ARKING Y1

SS8050W

High Collector Current

Complementary to SS8550W

Ƶ Features

ƽ

ƽ

SS8050W

1

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200

300 400 500 600 700 800 900 1000

1

10

100

1000

11

0100

1

10

100

1000

0

25 50 75 100 125 150

0

50

100

150

200

250

300

1

10 100 1000

100

1000

0.1

1 10

1

10

100

1

10 100 1000

10

100

1000

0.0

0.5 1.0 1.5 2.0

0.00

0.05

0.10

0.15

0.20

0.25

0.30

1

10 100 1000

1

10

100

1000

V

CE

=1V

COLLCETOR CURRENT I

C

(mA)

BASE-

EMMITER VOLTAGE V

BE

(m

V)

I

C

V

BE

—

—

Ta=100

℃

Ta=25

℃

I

C

f

T

—

—

TRA

NSITION FREQUENCY f

T

(MHz

)

COLLECTOR CURRENT I

C

(m

A)

V

CE

=10V

Ta=25

℃

CO

LLECTOR POWER DISSIPATION

P

C

(mW)

AM

BIENT TEMPERATURE T

a

(

)

℃

P

C

—

— T

a

COLLECTOR CURRENT I

C

(m

A)

BASE-

EMITTER SATURATION

VOLTAGE V

BEs

at

(mV)

I

C

V

B

Esat

—

—

β=10

Ta=100

℃

Ta=25

℃

2000

1500

Cob

Cib

CAPACIT

ANCE C (pF)

REVERSE VO

LTAGE V (V)

V

CB

/ V

EB

C

ob

/ C

ib

—

—

f=1M

Hz

I

E

=0/I

C

=0

Ta=25

℃

200

20

DC CURRENT GAIN h

FE

COLLECTOR CURRENT I

C

(m

A)

Ta=100

℃

Ta=25

℃

V

CE

=1V

I

C

h

FE

—

—

1500

1000uA

900uA

800uA

700uA

600uA

500uA

400uA

300uA

200uA

I

B

=100uA

COLLECTOR CURRENT I

C

(A)

COLLECTOR-EM

ITTER VOLTAGE V

CE

(V)

S

tatic Characteristic

C

OMMON

EMITTER

Ta=25

℃

1500

β=10

Ta=100

℃

Ta=25

℃

COLLECTOR-EMITTER SATURATION

VO

LTAGE V

CE

sat

(mV)

COLLECTOR CURRENT I

C

(m

A)

I

C

V

C

Esat

—

—

1500

SS8050W

2

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