Absolute Maximum Ratings
Ratings at 25℃ ambient temperature unless otherwise specified.
SOT-89
Features
PNP Transistor
1.Base 2.Collector 3. Emitter
⚫ Low Saturation Voltage
⚫ High Speed Switching Time
⚫ As Complementary Type of the NPN
Equivalent Circuit
1.Base
2.Collector
3.. Emitter
Parameter
Symbol
Value Unit
Collector Base Voltage -V
CBO
50 V
Collector Emitter Voltage -V
CEO
50 V
Emitter Base Voltage -V
EBO
5 V
Collector Current -I
C
2 A
Maximum Power Dissipation P
D
0.5 W
Junction Temperature T
J
150
℃
Storage Temperature Range T
STG
-55 to +150
℃
Parameter Symbol Value Unit
Thermal Resistance Junction to Ambient R
θJA
250
℃/W
Thermal Characteristics
2SA1213
1
www.slkormicro.com
Rev.1 -- 15 December 2018
Electrical Characteristics (T
A
=25℃)
Parameter Symbol Min. Typ. Max. Unit
DC Current Gain
at V
CE
= -2 V, I
C
= -500 mA Current Gain Group
at V
CE
= -2 V, I
C
= -2 A
O
Y
H
FE
70
120
20
--
--
--
140
240
--
--
Collector Base Cutoff Current
at V
CB
= -50 V
-I
CBO
-- -- 100 nA
Emitter Base Cutoff Current
at V
EB
= -5 V
-I
EBO
-- -- 100 nA
Collector Base Breakdown Voltage
at I
C
= -100 μA
-V
(BR)CBO
50 -- -- V
Collector Emitter Breakdown Voltage
at I
C
= -1 mA
-V
(BR)CEO
50 -- -- V
Emitter Base Breakdown Voltage
at I
E
= -100 μA
-V
(BR)EBO
5 -- -- V
Collector Emitter Saturation Voltage
at I
C
= -1 A, I
B
= -50 mA
-V
CE(sat)
-- -- 0.5 V
Base Emitter Saturation Voltage
at I
C
= -1 A, I
B
= -50 mA
-V
BE(sat)
-- -- 1.2 V
Transition Frequency
at V
CE
= -2 V, I
C
= -500 mA
F
T
100 -- -- MHz
Output Capacitance
at V
CB
= -10 V,I
E
= 0, f = 1MHz
C
ob
-- 40 -- pF
2
www.slkormicro.com
2SA1213
Rev.1 -- 15 December 2018