Features
Bi-directional ESD protection of 2 lines
IReverse stand-off voltage: 15.0V Max
Low clamping voltage
Low leakage current: nA Level
Response time is typically
ESD Protection: 30kV(air)/ 30kV(contact)( IEC61000-4-2)
SOT-23
Circuit Diagram
Discription
components from damage or upset due to electrostatic
discharge (ESD) and other voltage induced transient events.
Excellent clamping capability, low leakage, low capacitance,
protection on designs that are exposed to ESD.
It gives designer the flexibility to protect one bi-directional
line in applications where arrays are not practical.
The PESD15VL2BT protects sensitive semiconductor
and fast response time provide best in class
Ordering information
Product ID
Pack
Qty(PCS)
PESD15VL2BT
SOT-23
3000
ESD PROTECTION DIODE
ELECTRONICS CO.,LTD
HUAXUANYANG HXY
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD
PESD15VL2BT
3
1
2
Absolute Ratings (T
amb
=25
°C )
Parameter Symbol Value Unit
Peak Pulse Power (tp = 8/20μs)
P
PPM
500 W
Peak Pulse Current(tp = 8/20μs)
I
PPM
15 A
Maximum lead temperature for soldering during 10s T
L
260 °C
Storage Temperature Range T
stg
-55 to +150 °C
Operating Temperature Range T
OP
-40 to +125 °C
Maximum junction temperature T
j
150 °C
ESD voltage IEC 61000-4-2 (air discharge) V
ESD
30 kV
ESD voltage IEC 61000-4-2 (contact discharge) V
ESD
30 kV
ELECTRICAL CHARACTERISTICS
ESD PROTECTION DIODE
ELECTRONICS CO.,LTD
HUAXUANYANG HXY
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD
Parameter Symbol Min Typ Max Unit Condition
Reverse Working Voltage V
RWM
-- -- 15.0 V
Breakdown Voltage V
BR
16.5 18.5 20.0 V I
T
=1mA
Leakage Current ILeak I
R
-- -- 100 nA V
RWM
=15V
Clamping Voltage V
C
-- 30.0 33.0 V I
PP
=15A,Tp=8/20μs
Junction Capacitance C
J
-- 32 45 pF
V
R
=0V, f=1MHz
(Pin 1 or 2 to 3)
IEC61000−4−2 Waveform IEC 61000-4-5 Waveform( 8/20µs pulse)
PESD15VL2BT