z
Collector Current: I
C
=1.5A
ELECTRONICS CO.,LTD
HUAXUANYANG HXY
NPN Plastic-Encapsulate Transistors
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD
Power Dissipation of 500mw
E
B
C
z
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
Y1
SOT89-3LSS8050
1000
FEATURES
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter Symbol Limit Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Jun
ction Temperature
Storage Temperature
V
CBO
V
CE
O
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
40
25
5
1.5
500
250
150
-55～+150
V
V
V
℃/W
℃
℃
A
mW
SS8050
SOT89-3L
B
C
E
ELECTRONICS CO.,LTD
HUAXUANYANG HXY
NPN Plastic-Encapsulate Transistors
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD
Typical Characteristics
ELECTRICAL CHARACTERISTICS (Ta
SS8050
=25
℃
unless otherwise specified)
Paramet
er Symbol Test conditions Min Typ Max Unit
Co
llecto
r
-b
ase b
r
eakd
o
w
n
voltage
V
(BR)CBO
I
C
=100uA, I
E
=0 40 V
Co
llecto
r
-emitter b
r
ea
kd
o
w
n
voltage
V
(BR)CEO
I
C
=0.1mA, I
B
=0 25 V
Emitter-base breakdo
wn voltage
V
(BR)EBO
I
E
=
100μA, I
C
=0
5
V
Collector cut-off curren
t
I
CBO
V
CB
=40V, I
E
=0 0.1 μA
Emitter cut-off current
I
CEO
V
CE
=20V, I
E
=0 0.1 μA
Emitter cut-off current
I
EBO
V
EB
=5V, I
C
=0 0.1 μA
h
FE(1)
V
CE
=1
V
, I
C
=
100mA 85 400
DC current gain
h
FE(2)
V
CE
=1
V
, I
C
=
800mA 40
Collector-emitter saturation
voltage
V
CE(sat)
I
C
=800mA, I
B
=80mA 0.5 V
Bas
e
-emitte
r satu
r
atio
n
v
o
lt
age
V
BE(sat)
I
C
=800mA, I
B
=80mA 1.2 V
Base-emitter v
o
lt
age
V
BE
V
CE
=1V, I
C
=10mA 1 V
Base-emitter positive favor v
oltage
V
BEF
I
B
=
1
A 1.55 V
Transition fre
quency
f
T
V
CE
=10V,I
C
=50mA,f=30MHz 100 MHz
output capacita
nce
C
ob
V
CB
=10V,I
E
=0,f=1MHz 15 pF