◎ SEMIHOW REV.A0,April 2023
HTB1A80AS
TO-92
Symbol
Absolute Maximum Ratings
Symbol Parameter Value Unit
V
DRM
Repetitive Peak
Off-State Voltage 1000 V
V
RRM
Repetitive
Peak Reverse Voltage 1000 V
I
T(RMS)
R.M.S. On
-State Current (T
C
≤42℃) 1 A
I
TSM
Surge On
-State Current (full cycle, tp=20ms) 15 A
I
2
t
Fusing Current (
tp=10ms) 1.25 A
2
S
di/dt
Critical Rate of Rise of On
-State Current (I
G
=2×I
GT
)
50 A/μs
I
GM
Peak Gate Current
2 A
P
G(AV)
Average Gate Power Dissipation
0.1 W
P
GM
Peak
Gate Power Dissipation 5 W
V
PP
Peak
Pulse Voltage
(T
J
=25℃, non-repetitive off-state, Fig.7)
3.5 kV
T
J
Operating
Junction Temperature -40~+125
o
C
T
STG
Storage
Temperature -40~+150
o
C
Features
Description
Symbol Value Unit
V
DRM
1000 V
I
T(RMS)
1 A
I
TSM
15 A
I
GT1-3(max)
5 mA
This triac is suitable for general purpose AC switching.
It can be used as an ON/OFF function in applications
such as heating regulation, induction motor starting
circuits, for phase control operation in light dimmers,
motor speed controllers. This product embeds a TVS
structure to absorb the inductive turn-off energy such
as those described in the IEC 61000-4-5 standards.
HTB1A80AS
3 QuadrantsTRIAC
G
T1
T2
◎ SEMIHOW REV.A0,April 2023
HTB1A80AS
Electrical Characteristics (T
J
=25℃ unless otherwise specified )
Symbol
Parameter Conditions Value Unit
I
GT
Gate Trigger Current
V
D
= 12V, R
L
=33Ω Ⅰ-Ⅱ-Ⅲ MAX 5 mA
V
GT
Gate Trigger Voltage
V
D
= 12V, R
L
=33Ω Ⅰ-Ⅱ-Ⅲ MAX 1 V
V
GD
Non
-Trigger Gate Voltage
1
V
D
= V
DRM
, R
L
=3.3K
Ω,
T
J
=125
o
C
Ⅰ-Ⅱ-Ⅲ MIN 0.2 V
I
L
Latching current
I
G
= 1.2I
GT
Ⅰ-Ⅲ
MAX
10
mA
Ⅱ 20
I
H
Holding current
I
T
= 100mA MAX 10 mA
dv/dt
Rate of Rise
of Off-State Voltage
V
D
= 2/3 V
DRM
, Gate Open,
T
J
=125
o
C
MIN 500 V/μs
(di/dt)c
Critical Rate of Rise of On
-State
Current
(dv/dt)c=10V/us, T
J
=125
o
C MIN 0.5 A/ms
Symbol
Parameter Conditions Value (MAX) Unit
V
TM
Peak On
-State Voltage
I
T
= 1.1A, tp= 380μs
T
J
=25
o
C 1.4 V
V
TO
Threshold Voltage
T
J
=125
o
C 0.8 V
R
O
Dynamic resistance
T
J
=125
o
C 287 mΩ
I
DRM
Repetitive Peak
Off-State Current
V
D
= V
DRM,
V
R
= V
RRM
T
J
=25
o
C 8 μA
I
RRM
Repetitive
Peak Reverse Current
T
J
=125
o
C 0.4 mA
Thermal Characteristics
Symbol
Parameter Conditions Value Unit
R
θJC
Thermal Resistance
(AC) 60
o
C/W
R
θJA
Thermal Resistance
Ambient(AC) 150
o
C/W
Static Characteristics