z
Low
forward voltage
z
Fast
reverse recovery time
z
Small
total capacitance
No
n-Repetitive Peak Reverse Voltage
V
RM
85
V
Peak R
epetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RW
M
V
R
80
For
ward Continuous Current
I
FM
300
mA
A
verage Rectified Ou tput Current
I
O
100
mA
I
FSM
2
A
J
unc
tion
T
e
m
p
e
rature
T
J
150
℃
S
torage Temperatu re
T
ST
G
-55~+1
50
℃
Para
mete
r Symbol Limit Unit
Po
wer Dissipation
P
D
150
mW
Fo
r
w
ard
S
u
rg
e
C
u
rrent @t=8.3ms
Non-Repetitive Peak
V
T
hermal Resistance from Junction
to Ambient
R
θ
JA
℃/W
833
Parameter
Symbol Test conditions Min Max Unit
Re
v
e
rs
e b
rea
kd
o
wn voltage
V
(B
R)
I
R
=
100uA 80 V
Re
verse voltage leakage current
I
R
V
R
=
80V 0.5 uA
F
orward voltage
V
F
I
F
=
100mA 1.2
V
Dio
de capacitance
C
D
V
R
=0V,
f=1MHz 3 pF
Re
verse recovery time
t
rr
I
F
=
10mA
4 ns
ELECTRONICS CO.,LTD
HUAXUANYANG HXY
1SS226
Switching Diodes
SOT-23
3
1
2
1
2
3
Product ID
Pack
Marking
Qty(PCS)
C3
SOT-231SS226
3000
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD
Features
Package Marking and Ordering Information
Maxmim Ratings (Ta=25 unless otherwise noted)
Electrcal Charcteristics (Ta=25 unless otherwise specified)
0
25 50 75 100
125 150
0
50
100
150
200
0.0
0
.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
100
02
0
406080
1
10
100
1000
0
5 10 15 20
0.8
1.0
1.2
F
orward Ch aracteristics
Reverse Characteristics
Power Derating Curve
PO
WER DISSIPATION P
D
(mW)
AM
BIENT TEMPERATURE Ta ( )
℃
T
a
=
1
0
0
℃
T
a
=
2
5
℃
FORWARD CURRENT I
F
(mA)
F
ORWARD VOLTAGE V
F
(V)
Ta=100
℃
Ta=25
℃
REVERSE
CURRENT I
R
(nA)
REVERSE
VOLTAGE V
R
(V)
Ta=25
℃
f=1M
Hz
C
a
pacita
nce Characteristics
REVERSE
VOLTAGE V
R
(V)
CAPACIT
ANCE BETWEEN TERMINALS
C
T
(pF)
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD
ELECTRONICS CO.,LTD
HUAXUANYANG HXY
1SS226
Switching Diodes
Typical Characteristics