Pow
er Dissipation
P
CM
: 1 W
(T
a
=25
)
!
"
#
#
$%&
Coll
ector-Base Voltage 40 V
#
$'
&
Collector-Emitter Voltage 25 V
#
'%
&
Emitter-Base Volta
ge 5V
$
Coll
ector Current -Continuous 1.5
A
"
(
Coll
ector Power Dissipatio
n
1.0
W
Operation Junction and Storage Temperature Range
T
J
,
*
-55
ș +
T
hermal Resist
ance ɍrom Junction o
Ambient
ٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞٞ
/W
125
SS8050
ELECTRONICS CO.,LTD
HUAXUANYANG HXY
NPN
Plastic-Encapsulate Transistors
Parameter Symbol Test conditions Min Typ Max Unit
Co
llector-base breakdo
wn voltage
V
(B
R)CBO
I
C
=100uA, I
E
=0
40 V
Collector-emitter breakdo
wn voltage
V
(B
R)CEO
I
C
=0.1mA, I
B
=
0
25
V
Emitter-bas
e breakdown voltage
V
(
BR)EBO
I
E
=100μA, I
C
=0
5 V
Collector cut-off current
I
CB
O
V
CB
=40V
, I
E
=0
0.1 μA
Emitter cut-off current
I
CE
O
V
CE
=20V
, I
E
=0
0.1 μA
Emitter cut-off current
I
EBO
V
EB
=5
V, I
C
=0
0.1 μA
h
FE(1)
V
CE
=1V,
I
C
=100mA
85
400
DC curr
ent gain
h
FE(2)
V
CE
=1V,
I
C
=800mA
40
Collector-emitter saturation
voltage
V
CE
(sat)
I
C
=800mA, I
B
=80mA
0.5
V
Base-emitter satu
ration voltage
V
BE(
sat)
I
C
=800mA, I
B
=80mA
1.2 V
Base-emitter vo
ltage
V
BE
V
CE
=1
V,
I
C
=
10m
A
1
V
Transition
frequency
f
T
V
CE
=
10V
, I
C
=
50mA,f=30MH
Z
100
MHz
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD
Features
Package Marking and Ordering Information
Maxmim Ratings (Ta=25
unless otherwise noted)
Electrcal Charcteristics (Ta=25 unless otherwise specified)
℃
℃
3
2
1
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
Product ID
Pack
Marking
Qty(PCS)
TO-92
S9013
1000
S9013
0.2 0.4 0.6 0.8 1.0 1.2
1
10
100
1000
1 10 100 1000
0.2
0.4
0.6
0.8
1.0
1.2
0.1 1 10
1
10
100
1 10 100 1000
10
100
1000
0.0 0.5 1.0 1.5 2.0 2.5
0
20
40
60
80
100
120
140
1 10 100 1000
1
10
100
1000
1500
300
30
3
COM
MON EMITTER
V
CE
=1V
COLLCETOR CURRENT I
C
(mA)
BASE-
EMMITER VOLTAGE V
BE
(V)
I
C
V
BE
—
—
T
a
=100
ć
T
a
=25
ć
COLLECTOR CURRENT I
C
(m
A)
BASE-
EMITTER SATURATION
VOLTAGE V
BEs
at
(V)
I
C
V
B
Esat
—
—
=10
T
a
=100
ć
T
a
=25
ć
1500
C
ob
C
ib
CAPACITANCE C (pF)
REVERSE VO
LTAGE V (V)
V
CB
/ V
EB
C
ob
/ C
ib
—
—
f=1M
Hz
I
E
=0/I
C
=0
T
a
=25
ć
200
20
300
303
300
30
3
3
30
300
30030
3
30
300
COM
MON EMITTER
V
CE
=1V
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I
C
(m
A)
T
a
=100
ć
T
a
=25
ć
I
C
h
FE
—
—
1500
COMMON
EMITTER
T
a
=25
ć
500uA
450uA
400uA
350uA
300uA
250uA
200uA
150uA
100uA
I
B
=50uA
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EM
ITTER VOLTAGE V
CE
(V)
S
tatic Characteristic
3
0.3
30
3
=10
T
a
=100
ć
T
a
=25
ć
COLLECTOR-EMITTER SATURATION
VO
LTAGE V
CEs
at
(mV)
COLLECTOR CURRENT I
C
(m
A)
I
C
V
CEsat
—
—
1500
SS8050
ELECTRONICS CO.,LTD
HUAXUANYANG HXY
NPN
Plastic-Encapsulate Transistors
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD
Typical Characteristics