z
High
voltage: V
CEO
=160V
z
Large
continuous collector current capability
Symbol Para
meter Value Unit
V
CBO
Coll
ector-Base Voltage
160 V
V
CE
O
Coll
ector-Emitter Voltage
160 V
V
EB
O
Emitter-Base
Voltage 6 V
I
C
Coll
ector Current -Continuous 1 A
P
C
Coll
ector Power Dissipation 0.5 W
Operation Junction and Storage Temperature Range
℃
T
J
,T
stg
-55~+
150
Parameter
Symbol Test conditions Min Max Unit
Co
llector-base breakdown voltage
V
(B
R)CBO
I
C
=
100μA , I
E
=0 160 V
Co
llector-emitter breakdown voltage
V
(B
R)CEO
*
I
C
=
10mA, I
B
=
0 160 V
Emitter-b
ase breakdown voltage
V
(
BR)EBO
I
E
=
10μA, I
C
=0 6 V
Co
llector cut-off current
I
CB
O
V
CB
=
150V, I
E
=0 1 μA
Emitter cut-off current
I
EBO
V
EB
=6
V, I
C
=0 1
μA
DC cu
rrent gain
h
FE
V
CE
=5
V, I
C
=
200mA 100 320
Co
llector-emitter saturation voltage
V
CE
(sat)
I
C
=
500m A, I
B
=50mA 1
V
Base-emitter v
oltage
V
BE
I
C
=5
mA, V
CE
=
5V 0.45 0.75 V
T
ransition frequency
f
T
V
CE
=5
V, I
C
=
200mA
20 MHz
Co
llector output capacitance
C
ob
V
CB
=
10V,I
E
=
0,f=1MHz 20 pF
*
pulse
test
1.
BASE
2.
COL
LECTOR
3.
EMITTER
ELECTRONICS CO.,LTD
HUAXUANYANG HXY
2SC2383
NPN
Plastic-Encapsulate Transistors
SOT-89
1
2
3
Product ID
Pack
Marking
Qty(PCS)
2383Y
SOT-89 2SC2383
1000
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD
Features
Package Marking and Ordering Information
Maxmim Ratings (Ta=25 unless otherwise noted)
Electrcal Charcteristics (Ta=25 unless otherwise specified)
℃
℃
Typical Characteristics
ELECTRONICS CO.,LTD
HUAXUANYANG HXY
2SC2383
NPN
Plastic-Encapsulate Transistors
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD