BR2SC2383TQ
Rev.A Feb.-2022 DATA SHEET
http://www.fsbrec.com 1 / 6
SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package.
V
CEO
高,可与 BR2SA1013TQ 互补，符合 AEC-Q101 标准高可靠性要求，无卤产品。
High V
CEO
, complementary pair with BR2SA1013TQ,Qualified to AEC-Q101 Standards for High
Reliability, HF Product.
用于彩电帧输出,伴音输出，满足汽车应用的严格要求。
Color TV class B sound output applications, Meet the stringent requirements of automotive
applications.
内部等效电路 / Equivalent Circuit
PIN1：Base PIN 2：Collector PIN 3：Emitter
放大及印章代码 / h
FE
Classifications & Marking
h
FE
Classifications
Symbol
R O Y
h
FE
Range
60～120 100～200 160～320
Marking
Q83R Q83O Q83Y
描述 / Descriptions
特征 / Features
用途 / Applications
引脚排列 / Pinning
1
3
2
**
**
**
BR2SC2383TQ
Rev.A Feb.-2022 DATA SHEET
http://www.fsbrec.com 2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
V
CBO
160 V
Collector to Emitter Voltage
V
CEO
160 V
Emitter to Base Voltage V
EBO
6.0 V
Collector Current-Continuous I
C
1.0 A
Collector Base-Continuous I
B
0.5 A
Collector Power Dissipation P
C
500 mW
Junction Temperature
T
j
150 ℃
Storage Temperature Range
T
stg
-55～150
℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Emitter Breakdown
V
oltage
V
CEO
I
C
=10mA I
B
=0 160 V
Collector Cut-Off Current I
CBO
V
CB
=150V I
E
=0 1.0 μA
Emitter Base Cut-Off Current I
EBO
V
EB
=6.0V I
C
=0 1.0 μA
DC Current Gain h
FE
V
CE
=5.0V I
C
=200mA 60 320
Collector to Emitter Saturation
V
oltage
V
CE(sat)
I
C
=500mA I
B
=50mA 1.5 V
Emitter to Base Saturation Voltage V
BE
V
CE
=5.0V I
C
=5.0mA 0.45 0.75 V
Transition Frequency f
T
V
CE
=5.0V I
C
=200mA 20 100 MHz
Collecto
r
Output Capacitance C
ob
V
CB
=10V I
E
=0
f=1.0MHz
20 pF
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)