DIW120SIC023
DIW120SIC023
Silicon Carbide (SiC) MOSFET
Siliziumkarbid (SiC) MOSFET
I
D
= 130 A
R
DS(on)
< 23 mΩ
T
jmax
= 175°C
V
DSS
= 1200 V
P
D
= 600 W
E
AS
= TBD mJ
Version 2023-11-02
TO-247
SPICE Model & STEP File
1
)
Marking
Type/Typ
HS Code 85412900
Typical Applications
DC/DC Converters
Power Supplies
DC Drives
Power Tools
Commercial / industrial grade
Suffix -Q: AEC-Q101 compliant
1
)
Suffix -AQ: in AEC-Q101 qualification
1
)
Typische Anwendungen
Gleichstrom-Wandler
Stromversorgungen
Gleichstrom-Antriebe
Elektrowerkzeuge
Standardausführung
Suffix -Q: AEC-Q101 konform
1
)
Suffix -AQ: in AEC-Q101 Qualifikation
1
)
Features
Advanced Trench Technology
Low on state resistance
Fast switching times
Low gate charge
Avalanche rated
100% Avalanche tested
Compliant to RoHS (examp. 7a),
REACH, Conflict Minerals
1
)
Besonderheiten
Advanced Trench Technologie
Niedriger Einschaltwiderstand
Schnelle Schaltzeiten
Niedrige Gate-Ladung
Avalanche-Charakteristik
100% Avalanche geprüft
Konform zu RoHS (Ausn. 7a),
REACH, Konfliktmineralien
1
)
Mechanical Data
1
) Mechanische Daten
1
)
Packed in tubes/cardboards 30/450 Verpackt in Stangen/Kartons
Weight approx. 6 g Gewicht ca.
Case material UL 94V-0 Gehäusematerial
Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen
MSL 1
Maximum ratings
2
) Grenzwerte
2
)
DIW120SIC023-AQ
Drain-Source voltage
Drain-Source-Spannung
V
GS
= 0 V (short) V
DSS
1200 V
Gate-Source-voltage
Gate-Source-Spannung
AC
recommend
V
GSS
-10 V to 25 V
-4 V to 18 V
Power dissipation – Verlustleistung T
C
= 25°C
3
) P
tot
600 W
Drain current continous
Drainstrom dauernd
T
C
= 25°C
3
)
T
C
= 100°C
3
)
I
D
125 A
100 A
Peak Drain current – Drain-Spitzenstrom
4
) I
DM
260 A
Source current continous
Sourcestrom dauernd
T
C
= 25°C
3
) I
S
100 A
Single pulse avalanche energy
Einzelpuls Avalanche-Energie
(Fig. 1)
I
AS
= TBD A, V
GS
= 10 V
L = 79 mH, R
G
= 25 Ω
E
AS
TBD mJ
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
j
T
S
-55…+175°C
-55...+175°C
1 Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2 T
A
= 25°C, unless otherwise specified – T
A
= 25°C, wenn nicht anders angegeben
3 Measured at heat flange – Gemessen an der Kühlfahne
4 Pulse width refer to SOA diagram – Pulsbreite siehe SOA-Diagramm
© Diotec Semiconductor AG http://www.diotec.com/ 1
1
2
3
4
Pb
E
L
V
W
E
E
E
R
o
H
S
Halogen
FREE
DIW120SIC023
Characteristics (static) Kennwerte (statisch)
T
j
= 25°C Min. Typ. Max.
Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung
I
D
= 100 µA V
GS
= 0 V (short) V
(BR)DSS
1200 V – –
Drain-Source leakage current – Drain-Source Leckstrom
V
DS
= V
DSS
V
GS
= 0 V (short) I
DSS
– 1 µA 50 µA
Gate-Body leakage current – Gate-Substrat Leckstrom
V
GS
= 18 V V
DS
= 0 V (short) I
GSS
– – 250 nA
Gate-Source threshold voltage – Gate-Source Schwellspannung
V
GS
= V
DS
I
D
= 25 mA T
j
= 25°C
V
GS
= V
DS
I
D
= 25 mA T
j
= 175°C
V
GS(th)
–
2.9 V
2 V
–
Drain-Source on-state resistance – Drain-Source Einschaltwiderstand
V
GS
= 18 V I
D
= 75 A T
j
= 25°C
V
GS
= 18 V I
D
= 75 A T
j
= 175°C
R
DS(on)
–
16 mΩ
29 mΩ
23 mΩ
–
Characteristics (dynamic) Kennwerte (dynamisch)
T
j
= 25°C Min. Typ. Max.
Forward Transconductance – Übertragungssteilheit
V
DS
= 20 V I
D
= 75 A g
FS
– 60 S –
Input Capacitance – Eingangskapazität
V
DS
= 1 kV V
GS
= 0 V f = 1 Mhz V
AC
= 25 mV C
iss
– 6150 pF –
Output Capacitance – Ausgangskapazität
V
DS
= 1 kV V
GS
= 0 V f = 1 Mhz V
AC
= 25 mV C
oss
– 260 pF –
Reverse Transfer Capacitance – Rückwirkungskapazität
V
DS
= 1 kV V
GS
= 0 V f = 1 Mhz V
AC
= 25 mV C
rss
– 19 pF –
Turn-On Delay & Rise Time – Einschaltverzögerung und Anstiegszeit
V
DD
= 800 V I
D
= 75 A V
GS
= -4V/18 V L = 276 nH
t
d(on)
t
r
–
TBD
TBD
–
Turn-Off Delay Time & Fall Time – Ausschaltverzögerung und Abfallzeit
V
DD
= 800 V I
D
= 75 A V
GS
= -4V/18 V L = 276 nH
t
d(off)
t
f
–
TBD
TBD
–
Switching Energy – Schaltenergie
V
DD
= 800 V I
D
= 75 A V
GS
= -4V/18 V L = 276 nH
E
on
E
off
E
total
–
TBD
TBD
TBD
–
Total Gate Charge – Gesamte Gate-Ladung
V
DD
= 800 V I
D
= 75 A V
GS
= -4V/18 V Q
g
– 45 nC –
Gate-Source Charge – Gate-Source-Ladung
V
DD
= 800 V I
D
= 75 A V
GS
= -4V/18 V Q
gs
– 9 nC –
Gate-Drain Charge – Gate-Drain-Ladung
V
DD
= 800 V I
D
= 75 A V
GS
= -4V/18 V Q
gd
– 21 nC –
Intrinsic Gate resistance – Innerer Gatewiderstand
f = 1 Mhz V
AC
= 25 mV R
Gi
– 0.5 Ω –
2 http://www.diotec.com/ © Diotec Semiconductor AG