SOT-23/ Plastic-Encapsulate Transistors
FEATURES
z
'0076
TRANSISTOR (NPN+NPN)
Epitaxial Planar Die Construction
z
Ideal for Medium Power Amplification and Switching
MARKING: 5551S
MAXIMUM RA
TINGS (T
a
=25 unless otherwise noted)
Symbol Parameter Value Unit
V
CBO
Coll
ector-Bas
e
V
o
lt
age 180
V
V
CEO
Collector-Emitter Voltage 160
V
V
EBO
Emitter-Base Voltage 6
V
I
C
Collector Current 600 mA
P
C
Collector Power Dissipation 300 mW
R
ΘJA
T
hermal Resist
ance F
r
om Jun
c
tion
T
o
Ambie
n
t
416
/W
Operation Junction and
Storage Temperature Range
T
J
,T
stg
-55
+1
50
ELECTRICAL CHARACTERISTICS (T
a
=25 unless otherwise specified)
Parameter Symbol Test c
onditions Min Typ Max Unit
Co
llecto
r
-b
ase b
r
eakd
o
w
n
v
o
lt
ag
e
V
(BR)CBO
I
C
=100µA, I
E
=0 180 V
Collector-emitter breakdown voltage
V
(BR)CEO
*
I
C
=1
mA, I
B
=
0 160 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=10µA, I
C
=0 6 V
Co
llecto
r
cu
t-o
ff cu
rren
t
I
CBO
V
CB
=120V, I
E
=0 50 nA
Emitter cut-off current
I
EBO
V
EB
=4
V
, I
C
=
0
50 nA
h
FE(1)
*
V
CE
=5V, I
C
=1mA 80
h
FE(2)
*
V
CE
=5V, I
C
=10mA 100 300
DC current gain
h
FE(3)
*
V
CE
=5
V
, I
C
=
50mA
30
V
CE(sat)1
*
I
C
=10mA, I
B
=1mA 0.15 V
Co
llecto
r
-emitter satu
r
atio
n
v
o
lt
ag
e
V
CE(sat)2
*
I
C
=50mA, I
B
=5mA 0.2 V
V
BE(sat)1
*
I
C
=
10mA, I
B
=1
mA
1
V
Base-emitter saturation voltage
V
BE(sat)2
*
I
C
=50mA, I
B
=5mA 1 V
Transition frequency
f
T
V
CE
=10V,I
C
=10mA, f=100MHz 100 300 MHz
Collector output capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz 6 pF
*Pulse test: pulse width 300μs, duty cycle 2.0%.
SOT-23 -6L
C
2
E
1
C
1
B
2
E
2
B
1
1
2
SOT-23-6L Package Outline Dimensions
SOT-23-6L
Suggested Pad Layout
Min. Max. Min.
Max.
A 1.050 1.250 0.041 0.049
A 1 0.000 0.100 0.000 0.004
A 2 1.050 1.150 0.041 0.045
b 0.300 0.500 0.012 0.020
c 0.100 0.200 0.004 0.008
D 2.820 3.020 0.111 0.119
E1 1.500 1.700 0.059 0.067
E 2.650 2.950 0.104 0.116
e
e1 1.800 2.000 0.071 0.079
L 0.300 0.600 0.012 0.024
θ
Symbol
Dimensions In Millimeters Dimensions In Inches
0.950(BSC) 0.037(BSC)