MECHANICAL SPECIFICATIONS:
Die Size 86.6 x 86.6 MILS
Die Thickness 5.9 MILS
Anode Bonding Pad Size 68.1 x 68.1 MILS
Top Side Metalization Al/Ni/Au – 50,000Å/15,000Å/500Å
Back Side Metalization Ti/Ni/Ag – 1,000Å/2,000Å/10,000Å
Scribe Alley Width 3.15 MILS
Wafer Diameter 6 INCHES
Gross Die Per Wafer 2,939
The CPC14-SIC10-1200 Silicon Carbide Schottky die is optimized for high temperature applications.
Parametrically, the device is energy e cient as a result of low total conduction losses and minimal
changes to switching characteristics as a function of temperature.
FEATURES:
• Positive temperature coefficient
• Low reverse leakage current
• Temperature independent switching characteristics
• High operating junction temperature
• Metalization suitable for standard die attach technologies
• Top metalization optimized for wire bonding
CPC14-SIC10-1200
Silicon Carbide Schottky Rectifier Die
10 Amp, 1200 Volt
APPLICATIONS:
• Power inverters
• Industrial motor drives
• Switch-mode power supplies
• Power factor correction
• Over-current protection
MAXIMUM RATINGS: (T
A
=25°C) SYMBOL UNITS
Peak Repetitive Reverse Voltage V
RRM
1200 V
DC Blocking Voltage V
R
1200 V
Continuous Forward Current I
F
10 A
Peak Forward Surge Current (tp=10ms) I
FSM
120 A
Operating and Storage Junction Temperature* T
J
, T
stg
-55 to +200 °C
*Maximum junction temperature was determined via a TO-247 package type.
Theoretically, SiC die can operate at junction temperatures greater than 600°C.
ELECTRICAL CHARACTERISTICS: (T
J
=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNIT
I
R
V
R
=1200V 100 640 μA
I
R
V
R
=1200V, T
J
=175°C 1.0 mA
V
F
I
F
=10A 1.4 1.6 V
V
F
I
F
=10A, T
J
=150°C 1.85 2.3 V
V
F
I
F
=10A, T
J
=175°C 2.0 2.6 V
Q
C
V
R
=800V 51 nC
C
J
V
R
=1.0V, f=1.0MHz 510 pF
C
J
V
R
=400V, f=1.0MHz 48 pF
C
J
V
R
=800V, f=1.0MHz 41 pF
www.centralsemi.com
R3 (26-July 2021)
www.centralsemi.com
