MECHANICAL SPECIFICATIONS:
Die Size 94.5 x 94.5 MILS
Die Thickness 5.9 MILS
Anode Bonding Pad Size 85.4 x 85.4 MILS
Top Side Metalization Al – 50,000Å
Back Side Metalization Ti/Ni/Ag – 1,000Å/2,000Å/10,000Å
Scribe Alley Width 3.15 MILS
Wafer Diameter 6 INCHES
Gross Die Per Wafer 2,459
The CPC11-SIC30-650 Silicon Carbide Schottky die is optimized for high temperature applications.
Parametrically, the device is energy e cient as a result of low total conduction losses and minimal
changes to switching characteristics as a function of temperature.
FEATURES:
• Positive temperature coefficient
• Low reverse leakage current
• Temperature independent switching characteristics
• High operating junction temperature
• Metalization suitable for standard die attach technologies
• Top metalization optimized for wire bonding
CPC11-SIC30-650
Silicon Carbide Schottky Rectifier Die
30 Amp, 650 Volt
APPLICATIONS:
• Power inverters
• Industrial motor drives
• Switch-mode power supplies
• Power factor correction
• Over-current protection
MAXIMUM RATINGS: (T
A
=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage V
RRM
650 V
Peak Reverse Surge Voltage V
RSM
650 V
DC Blocking Voltage V
R
650 V
Continuous Forward Current I
F
30 A
Peak Forward Surge Current, tp=10ms I
FSM
165 A
Operating and Storage Junction Temperature* T
J
, T
stg
-55 to +175 °C
*Maximum junction temperature was determined via a TO-247 package type.
Theoretically, SiC die can operate at junction temperatures greater than 600°C.
ELECTRICAL CHARACTERISTICS: (T
J
=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
I
R
V
R
=650V 30 370 µA
I
R
V
R
=650V, T
J
=175°C 390 µA
BV
R
I
R
=370A 650 V
V
F
I
F
=30A 1.5 1.7 V
V
F
I
F
=30A, T
J
=150°C 1.77 2.1 V
V
F
I
F
=30A, T
J
=175°C 1.85 2.25 V
Q
C
V
R
=400V 72 nC
C
J
V
R
=1.0V, f=1.0MHz 990 pF
C
J
V
R
=300V, f=1.0MHz 117 pF
C
J
V
R
=600V, f=1.0MHz 101 pF
www.centralsemi.com
R2 (22-July 2020)
www.centralsemi.com
