CPZ18-BZX55C3V3 THRU
CPZ18-BZX55C6V2
Zener Diode Die
500mW, 3.3 THRU 6.2 VOLT
Die Size 13.8 x 13.8 MILS
Die Thickness 7.5 MILS
Anode Bonding Pad Size 7.5 x 7.5 MILS
Top Side Metalization Al – 13,000Å
Back Side Metalization Au – 14,000Å
Scribe Alley Width 1.6 MILS
Wafer Diameter 4 INCHES
Gross Die Per Wafer 61,141
The CPZ18-BZX55C3V3 thru CPZ18-BZX55C6V2 are silicon Zener diodes ideal for all types of
commercial, industrial, entertainment, and computer applications.
MECHANICAL SPECIFICATIONS:
BACKSIDE CATHODE R0
MAXIMUM RATINGS: SYMBOL UNITS
Operating and Storage Junction Temperature T
J
, T
stg
-65 to +150 °C
ELECTRICAL CHARACTERISTICS: (T
A
=25°C) V
F
=1.0V MAX @ I
F
=100mA (for all types)
Type
Zener
Voltage
V
Z
@ I
ZT
Test
Current
Maximum
Zener
Impedance
Maximum
Reverse
Current
Maximum
Zener
Current
Maximum
Temperature
Coefficient
MIN NOM MAX I
ZT
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
I
R
@ V
R
I
ZM
ΘV
Z
V V V mA Ω Ω mA μA V mA % / °C
CPZ18-BZX55C3V3 3.1 3.3 3.5 5.0 85 600 1.0 2.0 1.0 115 -0.060
CPZ18-BZX55C3V6 3.4 3.6 3.8 5.0 85 600 1.0 2.0 1.0 105 -0.055
CPZ18-BZX55C3V9 3.7 3.9 4.1 5.0 85 600 1.0 2.0 1.0 95 -0.050
CPZ18-BZX55C4V3 4.0 4.3 4.6 5.0 75 600 1.0 1.0 1.0 90 -0.040
CPZ18-BZX55C4V7 4.4 4.7 5.0 5.0 60 600 1.0 0.5 1.0 85 -0.020
CPZ18-BZX55C5V1 4.8 5.1 5.4 5.0 35 550 1.0 0.1 1.0 80 +0.010
CPZ18-BZX55C5V6 5.2 5.6 6.0 5.0 25 450 1.0 0.1 1.0 70 +0.025
CPZ18-BZX55C6V2 5.8 6.2 6.6 5.0 10 200 1.0 0.1 2.0 64 +0.032
R1 (25-August 2017)
www.centralsemi.com
