CPZ19-BZX55C6V8 THRU
CPZ19-BZX55C33
Zener Diode Die
500mW, 6.8 THRU 33 VOLT
Die Size 17.7 x 17.7 MILS
Die Thickness 7.5 MILS
Anode Bonding Pad Size 11 x 11 MILS
Top Side Metalization Al – 13,000Å
Back Side Metalization Au – 14,000Å
Scribe Alley Width 1.6 MILS
Wafer Diameter 4 INCHES
Gross Die Per Wafer 36,642
The CPZ19-BZX55C6V8 thru CPZ19-BZX55C33 are silicon Zener diodes ideal for all types of
commercial, industrial, entertainment, and computer applications.
MECHANICAL SPECIFICATIONS:
BACKSIDE CATHODE R0
MAXIMUM RATINGS: SYMBOL UNITS
Operating and Storage Junction Temperature T
J
, T
stg
-65 to +150 °C
ELECTRICAL CHARACTERISTICS: (T
A
=25°C) V
F
=1.0V MAX @ I
F
=100mA (for all types)
Type
Zener
Voltage
V
Z
@ I
ZT
Test
Current
Maximum
Zener
Impedance
Maximum
Reverse
Current
Maximum
Zener
Current
Maximum
Temperature
Coefficient
MIN NOM MAX I
ZT
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
I
R
@ V
R
I
ZM
ΘV
Z
V V V mA Ω Ω mA μA V mA % / °C
CPZ19-BZX55C6V8 6.4 6.8 7.2 5.0 8.0 150 1.0 0.1 3.0 58 +0.040
CPZ19-BZX55C7V5 7.0 7.5 7.9 5.0 7.0 50 1.0 0.1 5.0 53 +0.045
CPZ19-BZX55C8V2 7.7 8.2 8.7 5.0 7.0 50 1.0 0.1 6.2 47 +0.048
CPZ19-BZX55C9V1 8.5 9.1 9.6 5.0 10 50 1.0 0.1 6.8 43 +0.050
CPZ19-BZX55C10 9.4 10.0 10.6 5.0 15 70 1.0 0.1 7.5 40 +0.055
CPZ19-BZX55C11 10.4 11.0 11.6 5.0 20 70 1.0 0.1 8.2 36 +0.060
CPZ19-BZX55C12 11.4 12 12.7 5.0 20 90 1.0 0.1 9.1 32 +0.065
CPZ19-BZX55C13 12.4 13 14.1 5.0 26 110 1.0 0.1 10 29 +0.070
CPZ19-BZX55C15 13.8 15 15.6 5.0 30 110 1.0 0.1 11 27 +0.070
CPZ19-BZX55C16 15.3 16 17.1 5.0 40 170 1.0 0.1 12 24 +0.075
CPZ19-BZX55C18 16.8 18 19.1 5.0 50 170 1.0 0.1 13 21 +0.075
CPZ19-BZX55C20 18.8 20 21.1 5.0 55 220 1.0 0.1 15 20 +0.080
CPZ19-BZX55C22 20.8 22 23.3 5.0 55 220 1.0 0.1 16 18 +0.080
CPZ19-BZX55C24 22.8 24 25.6 5.0 80 220 1.0 0.1 18 16 +0.080
CPZ19-BZX55C27 25.1 27 28.9 5.0 80 220 1.0 0.1 20 14 +0.085
CPZ19-BZX55C30 28.0 30 32.0 5.0 80 220 1.0 0.1 22 13 +0.085
CPZ19-BZX55C33 31.0 33 35.0 5.0 80 220 1.0 0.1 24 12 +0.085
R0 (25-August 2017)
www.centralsemi.com
