BRD7N65
Rev.B Mar.-2023 DATA SHEET
http://www.fsbrec.com 1 / 6
TO-252 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package.
低栅电荷,低反馈电容,开关速度快,无卤产品。
Low gate charge, low crss, fast switching.
Halogen-free Product,HF Product.
用于高功率 DC/DC 转换和功率开关。
These devices are well suited for high efficiency switching DC/DC converters and switch mode power
supplies.
PIN1：G PIN 2：D PIN 3：S PIN 4：D
印章代码 / Marking
见印章说明。See Marking Instructions
描述 / Descriptions
特征 / Features
用途 / Applications
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
BRD7N65
Rev.B Mar.-2023 DATA SHEET
http://www.fsbrec.com 2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Drain-Source Voltage V
DSS
650 V
Drain Current
I
D
(Tc=25℃)
7.0 A
Drain Current
I
D
(Tc=100℃)
4.4 A
Drain Current - Pulsed I
DM
28 A
Gate-Source Voltage V
GSS
±30 V
Single Pulsed Avalanche Energy E
AS
420 mJ
Repetitive Avalanche Energy E
AR
14.7 mJ
Avalanche Current I
AR
7.0 A
Power Dissipation
P
D
(Tc=25℃)
95 W
Operating and Storage Temperature Range T
j
,T
stg
-55 to 150
℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V I
D
=250μA 650 V
Zero Gate Voltage Drain Current I
DSS
V
DS
=650V V
GS
=0V 1.0 μA
V
DS
=520V T
C
=125℃
100 μA
Gate-Body Leakage
Current,Forward
I
GSS
V
GS
=±30V V
DS
=0V ±100 nA
Gate Threshold Voltage V
GS(th)
V
DS
=V
GS
I
D
=250μA 2.0 4.0 V
Static Drain-Source
On-Resistance
R
DS(on)
V
GS
=10V I
D
=3.5A 1.1 1.5 Ω
Forward Transconductance g
FS
V
DS
=40V I
D
=3.5A 8.2 S
Drain-Source Diode Forward
V
oltage
V
SD
V
GS
=0V I
S
=7.0A 1.4 V
Input Capacitance C
iss
V
DS
=25V V
GS
=0V
f=1.0MHz
1100 1500 pF
Output Capacitance C
oss
110 150 pF
Reverse Transfer Capacitance C
rss
12 16 pF
Turn-On Delay Time t
d(on)
V
DD
=300V I
D
=7.0A
R
G
=25Ω
15 40 ns
Turn-On Rise Time t
r
30 70 ns
Turn-Off Delay Time t
d(off)
110 230 ns
Turn-Off Fall Time t
f
40 90 ns
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)