��� Features
●
High speed switching. (Tf : Typ. : 20ns at IC =
-
3A)
●
Low saturation voltage, typically
(Typ. : -2 00mV at IC = -2A, IB = -0.2A)
●
Strong discharge power for inductive load and
capacitance load.
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector - Base Voltage V
CBO
-60
Collector - Emitter Voltage VCEO -60
Emitter - Base Voltage V
EBO
-6
I
C
-3
ICP -6
Collector Power Dissipation P
C
0.5 W
Junction Temperature T
J
150
Storage Temperature range Tstg -55 to 150
V
℃
Collector Current A
■ Electrical Characteristics Ta = 25℃
Parameter Symbol Testconditons Min Typ Max Unit
Collecto- base breakdown voltage V
CBO
Ic= -100 µA
,
IE=0 -60
Collector- emitter breakdown voltage VCEO
Ic= -1 mA
,
I
B
=0
-60
Emitter - base breakdown voltage V
EBO
I
E
= -100
μ
A
,
I
C
=0
-6
Collector-base cut-off current I
CBO
V
CB
= -40 V , I
E
=0 -1.0
Emitter cut-off current IEBO VEB= -4V , IC=0 -1.0
DC current gain h
FE
V
CE
= -2V, I
C
= -100mA 120 390
Collector-emitter saturation voltage V
CE(sat)
I
C
=-2A, I
B
=-200mA -0.2 -0.5 V
Collector output capacitance Cob VCB= -10V, IE=0mA, f=1MHz 50 PF
Transition frequency f
T
V
CE
= -10V, I
E
= 10mA,f=10MHz 180 MHz
V
uA
2SA2071
1
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