WMK7N65D1B WMH7N65D1B WMAA7N65D1B
WML7N65D1B WMO7N65D1B WMAH7N65D1B
www.way-on.com
Rev.1.4 2023
D,TAB
S
G
Absolute Maximum Ratings（T
C
=25℃）
Parameter
Symbol
WMK
WMO/WMH/WMAH/WMAA
WML
Unit
Drain-source voltage
V
DSS
650
V
Gate-source voltage
V
GS
±30
V
Continuous drain current
Tc=25℃
Tc=100℃
I
D
7
A
I
D
4.5
A
Pulsed
dra
i
n current
1
I
DM
28
A
Avalanche energy, single pulse
2
E
AS
735
mJ
Power dissipation
P
D
150
150
1.2
63
0.5
W
Derate above 25°C
1.2
W/℃
Operating junction temperature
T
j
-55~150
℃
Storage temperature
T
stg
-55~150
℃
Continuous diode forward current
I
S
7
A
Diode pulse current
1
I
Spulse
28
A
Thermal Characteristic
Thermal resistance,junction-to-case
R
θJC
0.83
0.83
1.98
℃/W
Thermal resistance,junction-to-ambient
R
θJA
62.5
℃/W
Description
650V 7A 1.12Ω N-ch Power MOSFET
WMOS D1 is Wayon’s 1
st
generation
VDMOS family that is dramatic reduction in
on-resistance and ultra-low gate charge for
applications requiring high power density
and high efficiency. And it is very robust
and RoHS compliant.
Features
Typ.R
DS(on)
=1.12Ω@V
GS
=10V
100% avalanche tested
RoHS Compliant
Applications
SMPS
Charger
DC-DC
TO-220F
TO-251-L3.5
TO-220
TO-252
RoHS
compliant
TO-251-L4.0
TO-251-L9.4
2
www.way-on.com
Rev.1.4 2023
WMx7N65D1B
Electrical Characteristics of MOSFET
Min.
Typ.
Max.
Drain-source break down voltage
BV
DSS
I
D
=250uA，V
GS
=0V
T
C
=25℃
650
-
-
V
Gate threshold voltage
V
GS(th)
I
D
=250uA，V
DS
=V
GS
T
J
=25℃
2.0
-
4.0
V
Drain-source leakage current
I
DSS
V
DS
=650V，V
GS
=0V
T
J
=25℃
-
-
1
μA
V
DS
=520V，V
GS
=0V
T
J
=125℃
-
-
100
μA
Gate-source leakage current,forward
I
GSSF
V
DS
=0V，V
GS
=30V
T
J
=25℃
-
-
100
nA
Gate-source leakage current,reverse
I
GSSR
V
DS
=0V，V
GS
=-30V
T
J
=25℃
-
-
-100
nA
Drain-source on-state resistance
3
R
DS(ON)
V
GS
=10V，I
D
=3.5A
T
J
=25℃
-
1.12
1.35
Ω
Transconductance
3
G
fs
V
DS
=20V
T
J
=25℃
-
7.5
-
S
Dynamic Characteristics of MOSFET（T
C
=25℃）
Min.
Typ.
Max.
Input capacitance
C
iss
f=1MHz，V
DS
=25V，
V
GS
=0V
-
1130
-
pF
Output capacitance
C
oss
-
92
-
pF
Reverse transfer capacitance
C
rss
-
9.8
-
pF
Gate to source charge
Q
gs
V
DD
=320V
I
D
=7A
V
GS
= 0 to 10V
-
5.4
-
nC
Gate to drain charge
Q
gd
-
7.2
-
nC
Total gate charge
Q
g
-
24.3
-
nC
Switching Characteristics of MOSFET（T
C
=25℃）
Min.
Typ.
Max.
Turn-on delay time
t
d on
V
DS
=320V，I
D
=7A，
R
G
=25Ω，V
GS
=0 to 10V
-
18
-
ns
Rise time
t
r
-
27
-
ns
Turn-off delay time
t
d off
-
77
-
ns
Fall time
t
f
-
33
-
ns
Characteristics of Body Diode（T
C
=25℃）
Min.
Typ.
Max.
Forward voltage
V
SD
I
SD
=7A，V
GS
=0V
-
-
1.4
V
Reverse recovery time
t
rr
V
DS
=320V，I
S
=7A，
V
GS
=10V
di/dt=100A/μs
-
430
-
ns
Reverse recovery current
I
rr
-
12
-
A
Recovery charge
Q
rr
-
2.6
-
μC
Notes:
1. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
2. The E
AS
data shows Max. rating . The test condition is V
DD
=50V, V
GS
=10V, L=30mH, I
AS
=7A,Tc=25℃.
3. The data tested by pulsed , pulse width ≤ 300μs , duty cycle ≤ 2%.