N-Channel Enhancement Mode MOSFET
Ordering Information
Orderable Part Number Package Type Form Shipping Marking
PDFN5*6
Tape & Reel
5000 / Tape & Reel
Absolute Maximum Ratings (T
J
=25°C Unless Otherwise Noted)
Symbol
Parameter
N-Channel Unit
V
DSS
Drain-Source Voltage
40
V
V
GSS
Gate-Source Voltage
±20
T
J
Maximum Junction Temperature
150 °C
T
STG
Storage Temperature Range
-55 to 150 °C
I
S
Diode Continuous Forward Current
T
C
=25°C
100
A
I
DM
Pulse Drain Current Tested
T
C
=25°C
400
①
A
I
D
Continuous Drain Current
T
C
=25°C
250
A
T
C
=100°C
162
P
D
Maximum Power Dissipation
T
C
=25°C
89
W
T
C
=100°C
36
I
D
Continuous Drain Current
T
A
=25°C
39
A
T
A
=70°C
31
P
D
Maximum Power Dissipation
T
A
=25°C
2.1
W
T
A
=70°C
1.3
I
AS
②
Avalanche Current, Single pulse
L=0.1mH 64
A
L=0.5mH 34
E
AS
②
Avalanche Energy, Single pulse
L=0.1mH 204
mJ
L=0.5mH 290
Thermal Characteristics
Symbol Parameter Rating Unit
R
JC
Thermal Resistance-Junction to Case Steady State 1.3 °C/W
R
JA
③
Thermal Resistance-Junction to Ambient Steady State 60 °C/W
Note
①
：
Max. current is limited by bonding
Note
②
：
UIS
tested and pulse width are limited by maximum junction temperature 150
°
C
Note
③
：
Surface Mounted on 1in
2
FR -4 board with 1oz
Pin Description Product Summary
PDFN5*6
Symbol Symbol N-Channel Unit
V
DSS
40 V
R
DS(ON)-Max
1 mΩ
ID 250 A
Feature Applications
⚫ Fast switching speed
⚫ Reliable and Rugged
⚫ ROHS Compliant & Halogen-Free
⚫ 100% UIS and Rg Tested
⚫ Moisture Sensitivity Level MSL1
⚫ DC-to-DC converters
⚫ Switch Mode Power Supply
⚫ Brushless DC motor control
Top View
Bottom View
SL250N04Q
1
www.slkormicro.com
Rev.1 -- 13 May 2018
SL250N04Q
N-Channel Electrical Characteristics (T
J
=25°C Unless Otherwise Noted)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Static Electrical Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
DS
=250uA
40
-
-
V
I
DSS
Zero Gate Voltage Drain Current V
DS
=32V, V
GS
=0V - - 1 uA
V
GS(th)
Gate Threshold Voltage V
DS
=V
GS
, I
DS
=250uA 1 1.7 2.3 V
I
GSS
Gate Leakage Current V
GS
=±20V, V
DS
=0V - - ±100 nA
R
DS(ON)
④
Drain-Source On-state Resistance
V
GS
=10V, I
DS
=20A - 0.8 1.0
mΩ
V
GS
=4.5V, I
DS
=10A - 1.25 1.6
gfs
Forward Transconductance
V
DS
=5V, I
DS
=10A
-
45
-
S
Dynamic Characteristics
⑤
R
G
Gate Resistance
V
GS
=0V,V
DS
=0V,
Freq.=1MHz
- 1.2 - Ω
C
iss
Input Capacitance
V
GS
=0V,
V
DS
=20V,
Freq.=1MHz
- 4928 -
pF
C
oss
Output Capacitance - 2000 -
C
rss
Reverse Transfer Capacitance - 65 -
t
d
(ON)
Turn-on Delay Time
V
GS
=10V,V
DS
=20V,
I
D
=20A,R
GEN
=3Ω
- 10.7 -
nS
t
r
Turn-on Rise Time - 25.3 -
t
d(OFF)
Turn-off Delay Time - 65.2 -
t
f
Turn-off Fall Time - 53.6 -
Q
g
Total Gate Charge
V
GS
=10V,V
DS
=20V,
I
D
=20A
- 69 -
nC
Q
gs
Gate-Source Charge - 16.5 -
Q
gd
Gate-Drain Charge - 10 -
Source-Drain Characteristics
V
SD
④
Diode Forward Voltage I
SD
=10A, V
GS
=0V - 0.72 1.1 V
t
rr
Reverse Recovery Time
I
F
=20A, V
R
=20V
dl
F
/dt=100A/s
- 48.6 - nS
Q
rr
Reverse Recovery Charge - 35.5 - nC
Note
④：
Pulse test (pulse width
300us, duty cycle
2%).
Note
⑤
：
Guaranteed by design, not subject to production testing.
SL250N04Q
2
www.slkormicro.com
Rev.1 -- 13 May 2018