General Description
This Power MOSFET is produced using Slkor's
Advanced Super-Junction technology.
This advanced technology has been especially tailored to
minimize conduction loss, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode.
These devices are well suited for AC/DC power conversion
in switching mode operation for higher efficiency.
Features
- 15A, 650V, R
DS(on)max
= 0.28Ω@V
GS
= 10 V
- Low gate charge ( typical 19.6nC)
- Lower Gate Resistance
- 100% Avalanche Tested
- Pb-free and RoHS Compliant
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Symbol Parameter SL15N60CF Units
V
DSS
Drain-Source Voltage 650 V
I
D
Drain Current - Continuous (T
C
= 25℃) 15 A
- Continuous (T
C
= 100℃) 8 A
I
DM
Drain Current - Pulsed
(Note 1)
45 A
V
GSS
Gate-Source Voltage
±
30
V
EAS Single Pulsed Avalanche Energy
(Note 2)
710 mJ
I
AR
Avalanche Current
(Note 1)
3.0 A
E
AR
Repetitive Avalanche Energy 1.11 mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
20 V/ns
MOSFET dv/dt 100
P
D
Power Dissipation (T
C
= 25℃) 30 W
- Derate above 25℃ 0.24 W/℃
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 ℃
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 ℃
Thermal Characteristics
Symbol Parameter SL15N60CF Units
R
θJC
Thermal Resistance, Junction-to-Case 4.1 ℃/W
R
θJS
Thermal Resistance, Case-to-Sink Typ. -- ℃/W
R
θJA
Thermal Resistance, Junction-to-Ambient 62.5 ℃/W
* Drain current limited by maximum junction temperature.
G
D
S
650V N-Channel Super-JMOSFET
S15N60CF
1
www.slkormicro.com
Rev.1 -- 16 November 2018
Electrical Characteristics T
C
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250mA 650 -- --
V
V
GS
= 0 V, I
D
= 0.25uA,T
J
= 150℃ 650 -- --
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 600 V, V
GS
= 0 V -- -- 1 uA
V
DS
= 480 V, T
C
= 125℃ -- 2 -- uA
I
GSSF
Gate-Body Leakage Current, Forward V
GS
= 30 V, V
DS
= 0 V -- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= -30 V, V
DS
= 0 V -- -- -100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250uA 2.5 -- 4.5 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 7.5 A -- 238 280 mΩ
R
g
Gate resistance F=1MHZ -- 1.1 -- Ω
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 400 V, V
GS
= 0V,
f = 1MHz
-- 780 -- pF
C
oss
Output Capacitance -- 23 -- pF
C
o(tr)
Time Related Output Capacitance
V
DS
= 0V to 400 V, V
GS
= 0 V
300 pF
C
o(er)
Energy Related Output Capacitance -- 37 -- pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DS
= 400 V, I
D
= 5.3A
V
GS
= 10 V, R
G
= 10 Ω
See Figure 13
-- 7.6 -- ns
t
r
Turn-On Rise Time -- 6.7 -- ns
t
d(off)
Turn-Off Delay Time -- 38.2 -- ns
t
f
Turn-Off Fall Time -- 8.4 -- ns
Q
g
Total Gate Charge
V
DS
=400 V, I
D
= 5.3A,
V
GS
= 10 V
-- 19.6 -- nC
Q
gs
Gate-Source Charge -- 3.7 -- nC
Q
gd
Gate-Drain Charge -- 9.7 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 15 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 45 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= 5.3A -- -- 1.2 V
t
rr
Reverse Recovery Time V
DD
= 400 V, I
S
= 5.3A, -- 234 -- ns
Q
rr
Reverse Recovery Charge dI
F
/ dt = 100 A/us -- 2.2 -- uC
※Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L=79mH,I
AS
= 3 A, R
G
= 25 Ω, starting T
J
= 25℃.
3. I
SD
≤ 5.3 A, di/dt ≤ 100 A/μs, V
DD
≤ 400 V, starting T
J
= 25℃.
S15N60CF
2
www.slkormicro.com
Rev.1 -- 16 November 2018