650V N-Channel MOSFET
Features
- 22A, 650V, R
DS(on)
=170mΩ@V
GS
= 10 V
- Low gate charge(typ. Qg = 30.2nC)
- High ruggedness
- Ultra fast switching
- 100% avalanche tested
- Improved dv/dt capability
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Symbol Parameter SL22N65C/SL22N65CF Units
V
DSS
Drain-Source Voltage 650 V
I
D
Drain Current - Continuous (T
C
= 25℃) 22 * A
- Continuous (T
C
= 100℃) 12* A
I
DM
Drain Current - Pulsed
(Note 1)
57 *
A
V
GSS
Gate-Source Voltage
±
30
V
EAS Single Pulsed Avalanche Energy
(Note 2)
985 mJ
I
AR
Avalanche Current
(Note 1)
4 A
E
AR
Repetitive Avalanche Energy
(Note 1)
1.62 mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
20
V/ns
MOSFET dv/dt 100
P
D
Power Dissipation (T
C
= 25℃) 36 W
- Derate above 25℃ 0.29 W/℃
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 ℃
T
L
Maximum lead temperature for soldering purposes,
260 ℃
1/8" from case for 5 seconds
Thermal Characteristics
Symbol Parameter Units
R
θJC
Thermal Resistance, Junction-to-Case 3.5 ℃/W
R
θJS
Thermal Resistance, Case-to-Sink Typ. - ℃/W
R
θJA
Thermal Resistance, Junction-to-Ambient 62.5 ℃/W
* Drain current limited by maximum junction temperature.
G
S
D
General Description
This Power MOSFET is produced using Slkor's
advanced Superjunction MOSFET technology.
This advanced technology has been especially tailored
to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies.
SL22N65C/SL22N65CF
1
www.slkormicro.com
Rev.1 -- 28 November 2018
SL22N65C/SL22N65CF
SL22N65C SL22N65CF
Electrical Characteristics T
C
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 1mA 650 -- -- V
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 1mA,TJ = 150℃ 650 -- -- V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 600 V, V
GS
= 0 V -- -- 1 uA
V
DS
=480 V, T
C
= 125℃ -- 2 -- uA
I
GSSF
Gate-Body Leakage Current, Forward V
GS
= 30 V, V
DS
= 0 V -- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= -30 V, V
DS
= 0 V -- -- -100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 1.7mA 2.5 -- 4.5 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 10 A -- 150 170 mΩ
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 400 V, V
GS
= 0 V,
f = 250KHz
-- 1240 -- pF
C
oss
Output Capacitance -- 34 -- pF
C
rss
Reverse Transfer Capacitance -- 3.2 -- pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DS
= 400 V, I
D
= 10 A,
R
G
= 10 Ω,VGS = 10 V
(Note 4, 5)
--
12
-- ns
t
r
Turn-On Rise Time -- 8 -- ns
t
d(off)
Turn-Off Delay Time -- 53 -- ns
t
f
Turn-Off Fall Time -- 10 -- ns
Q
g
Total Gate Charge
V
DS
= 400 V, I
D
= 10 A,
V
GS
= 10 V
(Note 4, 5)
-- 30.2 -- nC
Q
gs
Gate-Source Charge -- 5.8 -- nC
Q
gd
Gate-Drain Charge -- 15.4 -- nC
R
G
Gate Resistance
f = 1MHz
1.3 Ω
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 22 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 57 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= 10 A -- -- 1.2 V
t
rr
Reverse Recovery Time V
DD
= 400 V, I
S
= 10A, -- 274 -- ns
Q
rr
Reverse Recovery Charge dI
F
/ dt = 100 A/us
(Note 4)
-- 3.33 -- uC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=79mH I
AS
= I
D
, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
I
D
di/dt 200A/us, V
DD
400
,
Starting T
J
= 25°C
4. Pulse Test : Pulse width 300us, Duty cycle 2%
5. Essentially independent of operating temperature
SL22N65C/SL22N65CF
2
www.slkormicro.com
Rev.1 -- 28 November 2018