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http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22 696141
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List
List.................................................................................................
Package outline...............................................................................
Features..........................................................................................
Mechanical data...............................................................................
Maximum ratings .............................................................................
Rating and characteristic curves........................................................
Pinning information...........................................................................
Marking...........................................................................................
Suggested solder pad layout.............................................................
Packing information..........................................................................
Reel packing....................................................................................
Suggested thermal profiles for soldering processes.............................
Formosa MS
2N7002KW
Do cu ment ID Is sue d Da te Revi se d Da te Re vision Page.
DS-251127 2009/07/10 2020/ 11/04 D 8
N-Channel SMD MOSFET ESD Protection
Package outline
Page 2
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22 696141
Formosa MS
Features
R =3.0 V =10V, @60V/0.50A
DS ( O N ) G S
Ω, •
R =4.0 V =4.5V, @60V/0.20A
DS ( O N ) GS
Ω, •
• ESD production 2kV (Human body mode)
Advanced trench process technology.•
High density cell design for ultra low on-resistance.•
Specially designed for battery operated system,•
solid-state relays drivers, relays, displays, lamps,
solenoids, memories, etc.
In compliance with EU RoHS 2002/95/EC directives.•
• Suffix "-H" indicates Halogen-free part, ex. 2N7002ΚW-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-323
Terminals : Solder plated, solderable per•
MIL-STD-750, Method 2026
Mounting Position : Any•
• Weight : Approximated 0.006 gram
60V N-Channel Enhancement
Mode MOSFET - ESD Protection
PARAMETER
Drain-source volt age
Drain-gate voltage(G = 1.0M
RS
Ω)
Drain to current-continue
Tot al power dissipation
Gate to source voltage-continue
Operation junction temperature range
Symbol
V
DSS
V
DGR
P
D
T
J
R
θ
JA
MIN.
-55
TYP. MAX.
60
60
120
+150
625
UNIT
V
V
o
C
o
C/W
Maximum ratings (AT T =25 C unless otherwise noted)
A
o
V
GS
I
D
200
±20
±115
V
mA
mW
Thermal resistance junction to ambien t
-pulsed
I
DM
800
2N7002KW
De rate above 25 C
O
De rate above 75 C
O
SOT-323
Dimensions in inches and (millimeters)
0.032 (0.80)
0.040 (1.00)
0.054 (1.35)
0.046 (1.15)
0.096 (2.40)
0.080 (2.00)
0.017 (0.42)Min.
(A)
(B)
(C)
Storage temperature range
T
STG
-55 +150
o
C
N-Channel SMD MOSFET ESD Protection
Do cu ment ID Is sue d Da te Revi se d Da te Re vision Page.
DS-251127 2009/07/10 2020/ 11/04 D 8