Description
This Power MOSFET is produced using advanced Trench technology.
This devices provide an excellent gate charge and RDS(on), which leads to extremely communication and
conduction losses. So it is very suitable for AC/DC power conversion, load switch and industrial power
applications.
Features
VDS=30V，ID=100A
RDS（on）Typ=2.9mΩ@VGS=10V
RDS（on）Typ=4.8mΩ@VGS=4.5V
Low FOM RDS(on)×Qgd
100% avalanche tested
Easy to use/drive
RoHS compliant
Applications
Power Management
PWM Application
Load Switch
100% UIS TESTED!
100% ΔVds TESTED!
Package Marking and Ordering Information
Device Marking Package Packing Reel (pcs)
SL100N03R PDFN5*6 Reel 5000
PDFN5*6-8L
SL100N03R
N-Channel Enhancement Mode Power MOSFET
1
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Absolute Maximum Ratings
* Drain current limited by maximum junction temperature.
Thermal Resistance
Notes:
1) L=0.5mH, V
DD
=30V, Start T
J
=25℃.
2) Limited by maximum junction temperature.
3) Repetitive Rating: Pulse width limited by maximum junction temperature.
Parameter Symbol Value Unit
Drain-source Voltage
V
DS
30 V
Gate-source Voltage
V
GS
±20
V
Continuous Drain Current
（
2
）
T
C
=25℃
I
D
100
A
T
C
=100℃
65
Pulsed Drain Current(T
C
=25℃,T
p
Limited By T
jmax
)
（
3
）
I
DM
400 A
Maximum Power Dissipation(T
C
=25℃) P
D
70 W
Avalanche energy , single Pulse(L=0.5mH)
（
1
）
E
AS
121 mJ
Operating Junction And Storage Temperature T
j
,T
stg
-55 To 150 ℃
Maximum lead temperature for soldering purposes, 1/8"
from case for 5 seconds
T
L
300 ℃
Parameter Symbol Max Unit
Junction-to-Case R
θJC
2.14 ℃/W
SL100N03R
2
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