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BLM80P04
Power MOSFET
1. Description
Advantages
BLM80P04 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. It can be used in a wide variety of
applications.
Key Characteristics
Parameter
Value
Unit
V
DS
-40
V
I
D
-5
A
R
DS(ON)
@10V
.Typ
74
mΩ
R
DS(ON)
@4.5V
.Typ
95
mΩ
Features
High power and current handing capability
Lead free product is acquired
RoHS product
Surface mount package
Applications
Load switch
Power management
Ordering Informations
Device Marking
Ordering Codes
Package
Packing
M80P04
BLM80P04-E
SOP-8
Reel
M80P04
BLM80P04-M
SOT-23
Reel
BLM80P04-E,M
(1)BLM80P04: -40V 85mΩ
(2)E:SOP-8 M:SOT-23
(2) Package type
(1) Chip name
SOP-8 Top View
SOT-23 Top View
YYWW:Year&Week
ZZ:Assembly Code
SSSSS:Lot Code
BLM80P04 www.belling.com.cn
Rev 1.0 Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited 2/ 9
1/2024 ©2011 Belling All Rights Reserved
BLM80P04
Power MOSFET
2. Absolute Ratings
at T
C
= 25°C, unless otherwise specified
Symbol
Parameter
Rating
Units
V
DSS
Drain-to-Source Voltage
-40
V
I
D
Continuous Drain Current
-5
A
Continuous Drain Current T
C
= 100 °C
-3.2
A
I
DM
Pulsed Drain Current(Note1)
-20
A
P
D
Power Dissipation
3.2
W
V
GS
Gate-to-Source Voltage
±20
V
T
J
，T
stg
Operating Junction and Storage
Temperature Range
150，–55 to 150
℃
3. Thermal Characteristics
Symbol
Parameter
Rating
Units
R
θJA
Junction-to-Ambient
53
℃/W
4. Electrical Characteristics
at T
C
= 25°C, unless otherwise specified
OFF Characteristics
Symbol
Parameter
Test
Conditions
Values
Units
Min.
Typ.
Max.
V
DSS
Drain to Source Breakdown
Voltage
V
GS
=0V,
I
D
=-250µA
-40
--
--
V
I
DSS
Drain to Source Leakage
Current
V
DS
=-40V,
V
GS
= 0V,
T
j
= 25℃
--
--
1
µA
I
GSS
Gate to Source Forward
Leakage
V
GS
=±20V
--
--
±
100
nA
ON Characteristics
Symbol
Parameter
Test
Conditions
Values
Units
Min.
Typ.
Max.
R
DS(ON)
Drain-to-Source On-
Resistance
V
GS
=-10V,
I
D
=-2.5A(Note2)
--
74
85
mΩ
V
GS
=-4.5V,
I
D
=-1.5A(Note2)
--
95
110
mΩ
V
GS(TH)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
=-250µA(Note2)
-1
-1.5
-2.5
V