Maximum ratings, at TA =25°C, unless otherwise specified
Symbol Parameter Rating Unit
(
BR)DSS
V
Drain-Source breakdown voltage 100 V
VGS Gate-Source voltage ±20 V
S
I
Diode continuous forward current
C
T
=25°C
87 A
D
I
Continuous drain current @VGS=10V
C
T
=25°C
87 A
C
T
=100°C
62 A
DM
I
Pulse drain current tested ①
C
T
=25°C
376 A
I
DSM
Continuous drain current @VGS=10V
T
A
=25°C 10 A
T
A
=70°C 8 A
EAS
Avalanche energy, single pulsed ②
41 mJ
D
P
Maximum power dissipation
C
T
=25°C
100 W
P
DSM
Maximum power dissipation ③
T
A
=25°C 1.25 W
S
TG
T
,
J
T
Storage and Junction Temperature Range -55 to 175 °C
Thermal Characteristics
Symbol Parameter Typical Unit
JC
R
Thermal Resistance, Junction-to-Case 1.5 °C /W
JA
R
Thermal Resistance, Junction-to-Ambient 100 °C/W
Features
N-Channel，5V Logic Level Control
Enhancement mode
Very low on-resistance RDS(on)
@ VGS=4.5V
100% Avalanche test
CSGP10R065
Device Marking and Package Information
Ordering code Package
CSGP10R065
TO-220
Marking
GS
(Max)
=100V, I
R
DS(on)
:6.5
Ω
@
=10V
BV
DSS
=87A
D
V
1/6
Ver
1.0
m
GS
(Max)
R
DS(on)
:9.0
Ω
@
=4.5V
V
m
CSGP10R065
D
G
S
TO-220
©2023 Ciss. All rights
r
ese
r
v
ed
Symbol Parameter Condition Min. Typ. Max. Unit
Static Electrical Characteristics @ Tj=25°C (unless otherwise stated)
(
BR)DSS
V
Drain-Source Breakdown Voltage VGS=0V, ID=250μA 100 -- -- V
D
SS
I
Zero Gate Voltage Drain Current VDS=100V,VGS=0V -- -- 1 μA
Zero Gate Voltage Drain Current(
j
T
=125℃)
VDS=100V,VGS=0V -- -- 100 μA
G
SS
I
Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA
G
S(TH)
V
Gate Threshold Voltage VDS=VGS,ID=250μA 1.1 -- 2.5 V
D
S(ON)
R
Drain-Source On-State Resistance ④
VGS=10V, ID=20A -- 5.5 6.5 mΩ
D
S(ON)
R
Drain-Source On-State Resistance ④
VGS=4.5V, ID=15A -- 7.0 9.0 mΩ
Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated)
i
ss
C
Input Capacitance
VDS=50V,VGS=0V,
f=1MHz
3129 pF
o
ss
C
Output Capacitance 774 pF
r
ss
C
Reverse Transfer Capacitance 85 pF
g
R
Gate Resistance f=1MHz -- 1 -- Ω
g
Q
Total Gate Charge
VDS=50V,ID=20A,
VGS=10V
-- 46 -- nC
gs
Q
Gate-Source Charge -- 6.5 -- nC
gd
Q
Gate-Drain Charge -- 9 -- nC
Switching Characteristics
d
(on)
t
Turn-on Delay Time
VDD=50V,
ID=20A,
RG=3Ω,
VGS=10V
--
11.7
-- ns
r
t
Turn-on Rise Time --
7.2
-- ns
d
(off)
t
Turn-Off Delay Time --
34.5
-- ns
f
t
Turn-Off Fall Time --
12.3
-- ns
Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated)
SD
V
Forward on voltage ISD=20A,VGS=0V -- 0.8 1.2 V
rr
t
Reverse Recovery Time
Tj=25℃,Isd=20A,
VGS=0V
di/dt=500A/μs
-- 21.6 -- ns
rr
Q
Reverse Recovery Charge -- 44.7 -- nC
NOTE:
① Repetitive rating; pulse width limited by max junction temperature.
② Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = 10A, VGS =10V. Part not recommended for use above this value
③ The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C.
④ Pulse width ≤ 300μs; duty cycle≤ 2%.
2/6
V
er1.0
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CSGP10R065
©2023 Ciss. All rights reserved