13
18
86
0.96
5055 to 1
130
Excellent stability and uniformity
R040
550
90
130
`VGS=10V
80
80
CSGJ
Ver1.0
= 80V, I
80R040
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol Parameter Rating Unit
(BR)DSS
V
Drain-Source breakdown voltage V
VGS Gate-Source voltage ±20 V
S
I
Diode continuous forward current
C
T
=25°C
A
D
I
Continuous drain current @
C
T
=25°C
A
C
T
=100°C
A
DM
I
Pulse drain current tested ①
C
T
=25°C
3 A
I
DSM
Continuous drain current @VGS=10V
T
A
=25°C A
T
A
=70°C A
EAS
Avalanche energy, single pulsed ②
mJ
D
P
Maximum power dissipation
C
T
=25°C
W
STG
T
,
J
T
Storage and Junction
Temperature
Range
-
°C
Thermal Characteristics
Symbol
Parameter
Typical
Unit
JC
R
Thermal Resistance, Junction-to-Case
°C /W
JA
R
Thermal Resistance,
Junction-to-Ambient
63
°C/W
Features
N-Channel
Extremely low switching loss
100% Avalanche test
CSGJ
Device Marking and Package Information
Ordering code Package
80R040
Marking
GS
(typ)
R
DS(on)
:2.6
Ω
@
=10V
BV
DSS
= 130A
D
V
1/7
©2023 Ciss. All rights reserved
m
CSGJ
DFN5*6
DFN5*6
130
61.4
5581
1691
97.2
8
20
1
50
82
65
28.5
50
40
40
2
25
50
42.0
80
80
Ver1.0
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
Static Electrical Characteristics @ Tj=25°C (unless otherwise stated)
(BR)DSS
V
Drain-Source Breakdown Voltage
VGS=0V,
ID=250μA
--
--
V
DSS
I
Zero Gate Voltage Drain Current
VDS= V,VGS=0V
--
--
1
μA
Zero Gate Voltage Drain Current(
j
T
=125℃)
VDS=80V,VGS=0V
--
--
100
μA
GSS
I
Gate-Body Leakage Current
VGS=±20V,VDS=0V
--
--
±100
nA
GS(TH)
V
Gate Threshold Voltage
VDS=VGS,ID=250μA
--
.0
V
DS(ON)
R
Drain-Source On- State Resistance
VGS=10V, ID= A
--
2.7
4.0
mΩ
Dynamic Electrical Characteristics @ Tj
= 25°C (unless otherwise stated)
iss
C
Input Capacitance
VDS= V,VGS=0V,
f=100kHz
pF
oss
C
Output Capacitance
pF
rss
C
Reverse Transfer Capacitance
pF
g
R
Gate Resistance
f=1MHz
--
--
Ω
g
Q
Total Gate Charge
VDS= V,ID=50A,
VGS=10V
--
--
nC
gs
Q
Gate-Source Charge
--
--
nC
gd
Q
Gate-Drain Charge
--
--
nC
Switching Characteristics
d(on)
t
Turn-on Delay Time
VDD= V,
ID= A,
RG=2Ω,
VGS=10V
--
--
ns
r
t
Turn-on Rise Time
--
10.2
--
ns
d(off)
t
Turn-Off Delay Time
--
60
--
ns
f
t
Turn-Off Fall Time
--
15
--
ns
Source-
Drain Diode Characteristics@ Tj
= 25°C (unless otherwise stated)
SD
V
Forward on voltage
ISD=20A,VGS=0V
--
0.8
1.2
V
rr
t
Reverse Recovery Time
Tj=25℃,Isd= A,
VGS=0V
di/dt= 00A/μs
--
--
ns
rr
Q
Reverse Recovery Charge
--
--
nC
NOTE:
①
Repetitive rating; pulse width limited by max junction temperature.
②
Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = 10A, VGS =10V. Part not recommended for use above this value
③
Pulse width ≤ 300μs; duty cycle≤ 2%.
2/7
--
--
--
--
--
--
80R040
MPGJ
③
©2023 Ciss. All rights reserved