Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol Parameter Rating Unit
(BR)DSS
V
Drain-Source breakdown voltage 60 V
S
I
Diode continuous forward current
A
T
=25°C
1.0 A
D
I
Continuous drain current @VGS=10V
A
T
=25°C
5.0
A
A
T
=100°C
3.0
A
DM
I
Pulse drain current tested ①
A
T
=25°C
12.5 A
D
P
Maximum power dissipation
A
T
=25°C
1.25 W
VGS Gate-Source voltage ±20 V
STG
T
J
T
Storage and operating temperature range -55 to 150 °C
Thermal Characteristics
Symbol Parameter Typical Unit
R
θJL
Thermal Resistance-Junction to Lead 60 °C/W
R
θJA
Thermal Resistance-Junction to Ambient 100 °C/W
N-Channel，5V Logic Level Control
Enhancement mode
Low on-resistance RDS(on)
@ VGS=4.5 V
Fast Switching
Device Marking and Package Information
Ordering code Package
CSTO5N60
Marking
CSTO5N60
Features
GS
(Max)
=60 V, I
R
DS(on) :50
Ω
@
=10V
BV
DSS
=5AD
V
m
GS
(Max)
R
DS(on) :60
Ω
@
=4.5V
V
m
1
©2023 Ciss. All rights reserved
Ver1.1
CSTO5N60TO-220F
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
Static Electrical Characteristics @ Tj
= 25°C (unless otherwise stated)
(BR)DSS
V
Drain-Source Breakdown Voltage
VGS=0V,
ID=250μA
60
--
--
V
DSS
I
Zero Gate Voltage Drain Current
VDS=60V,VGS=0V
--
--
1
μA
Zero Gate Voltage Drain Current(Tj=125℃)
VDS=60V,VGS=0V
--
--
100
μA
GSS
I
Gate-Body Leakage Current
VGS=±20V,VDS=0V
--
--
±100
nA
GS(TH)
V
Gate Threshold Voltage
VDS=VGS,ID=250μA
1.3
1.5
2.4
V
DS(ON)
R
Drain-Source On-State Resistance②
VGS=10V, ID=3A
--
50
mΩ
DS(ON)
R
Drain-Source On-State Resistance②
VGS=4.5V, ID=2A
--
60
mΩ
Dynamic Electrical Characteristics @ T
j= 25°C (unless otherwise stated)
iss
C
Input Capacitance
VDS=30V,VGS=0V,
f=1MHz
587
pF
oss
C
Output Capacitance
--
39
pF
rss
C
Reverse Transfer Capacitance
--
16
pF
g
R
Gate Resistance
f=1MHz
5.8
Ω
g
Q
Total Gate Charge
VDS=30V,ID=3A,
VGS=10V
--
16
--
nC
gs
Q
Gate-Source Charge
--
1.6
--
nC
gd
Q
Gate-Drain Charge
--
3.8
--
nC
Switching Characteristics
d(on)
t
Turn-on Delay Time
VDD=30V,
ID=3A,
RG=3Ω,
VGS=10V
--
7.5
--
nS
r
t
Turn-on Rise Time
--
4.5
--
nS
d(off)
t
Turn-Off Delay Time
--
22.5
--
nS
f
t
Turn-Off Fall Time
--
9
--
nS
Source-
Drain Diode Characteristics@ Tj= 25°C (unless otherwise stated)
SD
V
Forward on voltage
ISD=3A,VGS=0V
--
0.8
1.2
V
rr
t
Reverse Recovery Time
Tj=25℃,Isd=3A,
di/dt=500A/μs
--
10
--
nS
rr
Q
Reverse Recovery Charge
15
nC
NOTE:
①
Repetitive rating; pulse width limited by max. junction temperature.
②
Pulse width ≤ 300μs; duty cycle≤ 2%.
CSTO5N60
2
Ver1.1
--
--
--
--
--
--
©2023 Ciss. All rights reserved
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