Application
Power s
witching application
Hard switched and high frequency circuits
Uninterruptible power supply
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
100 V
Gate-Source Voltage
V
GS
±20 V
Drain Current-Continuo
us
I
D
2 A
Drain Current-Pulsed
(Note 1)
I
DM
5 A
Maximum Power Dissipation
P
D
1.25 W
Operating Junction and Storage Temperature Range
T
J
,T
STG
-55 To 150 ℃
Device Marking and Package Information
Ordering code Pac
ka
ge
CSTO2N10
SOT23-3L
M
arki
ng
CSTO2N10
CSTO2N10
SOT23-3L
D
G
S
Enhancement mode
Features
GS
(Max)
=100 V, I
R
DS(on)
:240
Ω
@
=10V
BV
DSS
=2A
D
V
m
Thermal Characteristics
Parameter Symbol
Value
Unit
Thermal Resistance, Junction-to-Case R
thJC
65
K/W
Thermal Resistance, Junction-to-Ambient R
thJA
100
1/6
Ver1.0
F
u
lly characterized avalanche voltage and current
Ultra low Rdson
ciss© Copyright reserv
ed
Gate-Body Leak
age Current I
GSS
V
GS
=±20V,V
DS
=0V - - ±100 nA
On Characteristics
(Note 3)
Gate Threshold Voltag
e V
GS(th)
V
DS
=V
GS
,I
D
=250μA 1.2 1.8 2.5
V
Drain-Source On-State Resist
ance R
DS(ON)
V
GS
=10V, I
D
=2A - 190 Ω
Forwa
rd Transconductance g
FS
V
DS
=5V,I
D
=1A 1 - - S
Dynamic Ch
aracteristics
(Note4)
Input Cap
a
cita
nce C
lss
-
449 -
PF
Output Capacitance C
oss
- 20 - PF
Revers
e T
r
ansfer Capac
itanc
e C
rss
V
DS
=50V,V
GS
=0V,
F=1.0MHz
- 8
S
w
itch
ing
Chara
cteristics
(Note 4)
T
u
rn-on Delay
T
ime t
d(on)
-
6 -
nS
Turn-on Rise Time t
r
- 10 - nS
Turn-Off Delay T
ime t
d(off)
- 10 - nS
Turn-Off Fall Ti
me t
f
V
DD
=50V,I
D
=2A,R
L
=25Ω
V
GS
=
10V,R
G
=1Ω
- 6
-
nS
Total Gate Charge Q
g
- 10 nC
Gate-Source C
harg
e
Q
gs
-
Gate-Drain Charge Q
gd
V
DS
=50V,I
D
=2A,
V
GS
=
10V
- 2.0
-
nC
Drain-Sour
ce Diode Characteristics
Diode For
ward Voltage
(Note 3)
V
SD
V
GS
=0V,I
S
=2A
Diod
e
For
w
ar
d Current
(Note 2)
I
S
-
- 2 A
Notes:
1. Repetitive R
ating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter Symbol Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdo
wn Voltage BV
DSS
V
GS
=0V I
D
=250μA 100
Zero Gate Voltage Drain Cu
rrent I
DSS
V
DS
=100V,V
GS
=0V - - 1 μA
2/6
Ver1.0
V
- -
- - 1.2 V
240 m
- PF
1.0 - nC
CSTO2N10
ciss© Copyright reser
v
ed