P-Channel 60-V(D-S) MOSFET
V(BR)DSS RDS(on)MAX ID
-60V 165mΩ@ 10V -2.0A
FEATURE
APPLICATION
※ TrenchFET Power MOSFET
※ Load Switch for Portable Devices
※ DC/DC Converter
Equivalent Circuit
Absolute Maximum Ratings ( Ta=25℃ unless otherwise noted)
Parameter Symbol Value Unit
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID -2.0 A
Drain Current-Pulsed (note 1) IDM -10 A
Pulsed Drain Current IDM -8 A
Avalanche Current IAS -5 A
Power Dissipation PD 1.25 W
Thermal Resistance from Junction to Ambient RθJA 120 ℃/W
Operating Junction and Storage Temperature Range TJ,TSTG -55~+150
℃
Note :
※Surface Mounted on FR4 Board, t < 5 sec.
1.GATE
2.SOURCE
3.DRAIN
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MOSFET ELECTRICAL CHARACTERISTICS
Static Electrical Characteristics (Ta = 25 ℃ Unless Otherwise Noted)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -60 V
Gate threshold voltage VGS(th) VDS =VGS, ID =-250µA -1 -1.9 -3 V
Gate-source leakage current IGSS VDS =0V, VGS =±20 V ±100 nA
Zero gate voltage drain current
IDSS VDS =-60V, VGS = 0V -1 µA
IDSS
VDS =-48V, VGS = 0V,
TJ=125°C
-50 µA
On-state Drain Current ID(ON) VGS =-10V, VDS ≥-4.5V -6 A
Drain-source on-resistance RDS(on) VGS =-10V, ID = -2A 158 165 mΩ
Forward tranconductance gFS VDS =-4.5V, ID =-1A 1.9 S
Input capacitance
Ciss
VDS = -30V,VGS =0V,
f=1MHz
210 pF
Output capacitance
Coss
28 pF
Reverse transfer capacitanceb
Crss
20 pF
Total Gate Charge Qg
VDS =-30V, VGS =-10V,
ID =-1.25 A
5.4 12 nC
Gate-Source Charge Qgs 1.15 nC
Gate-Drain Charge Qgd 0.92 nC
Turn-on Delay time td(on)
VDD=-30V, RL=6Ω,
ID=-1A
VGEN=-4.5V, RG=6Ω
10.5 20 nS
Rise time tr 11.5 20 nS
Turn-on Delay time td(off) 15.5 30 nS
Fall time tr 7.5 15 nS
Continuous Current IS -1.25 A
Pulsed Current ISM -8 A
Dioge forward voitage VSD Is=-1.25A, VGS=0V -0.82 -1.25 V
Source-Drain Reverse Recovery
Ti
me
trr IF=-1.25A Di/Dt=100A/µs 30 55
ns
Note :
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t < 5 sec.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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