60V/0.3A N-Channel MOSFET
0
Symbol Rating Unit
V
DS
60 V
V
GS
±20 V
T
J
150 °C
T
STG
-50 to 155 °C
I
S
Tc=25°C 0.3 A
I
DM
Tc=25°C 1.2 A
I
D
Tc=25°C 0.3 A
Drain-Source Breakdown Voltage
Maximum Junction Temperature
Storage Temperature Range
Tc=25°C 0.35
Diode Continuous Forward Current
Mounted on Large Heat Sink
Pulse Drain Current Tested
Continuous Drain Current@GS=10V
P
D
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
R
θJA
Thermal Resistance Junction-to-Ambient @ Steady State 357 °C/W
Maximum Power Dissipation W
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
Gate-Source Voltage
D1
S1
D2
Schematic diagram
Marking and pin assignment
SOT-23 top view
72K: Device code
Product Summary
V
DS
R
DS(ON)
MAX I
D
MAX
3.5Ω@10V
4.5Ω@4.5V
60V 0.3A
Features
•Trench Power MV MOSFET technology
•Voltage controlled small signal switch
•Low input Capacitance
•Fast Switching Speed
•Low Input / Output Leakage
Application
•Battery operated systems
•Solid-state relays
D
G
S
D
G
S
72K
2N7002K
1
www.slkormicro.com
Symbol Parameter Condition Min Typ Max Unit
BV
(BR)DSS
Drain-Source Breakdown Voltage
VGS=0V，ID=250μA
60 -- -- V
I
DSS
Zero Gate Voltage Drain Current
VDS=60V，VGS=0V
-- -- 1 uA
I
GSS
Gate-Body Leakage Current
VGS=±20V，VDS=0V
-- -- ±10 uA
V
GS(th)
Gate Threshold Voltage
VDS=VGS，ID=250μA
0.8 1.5 3 V
VGS=10V，ID=0.3A
-- 2 3.5
VGS=4.5V，ID=0.2A
-- 3 4.5
C
ISS
Input Capacitance -- 18 -- pF
C
OSS
Output Capacitance -- 12 -- pF
C
RSS
Reverse Transfer Capacitance -- 7 -- pF
Q
g
Total Gate Charge
VDS=60V，ID=0.3A，
VGS=10V
-- 1.7 -- nC
t
d(on)
Turn-on Delay Time
--
4.8
--
nS
t
d(off)
Turn-Off Delay Time -- 18 -- nS
t
rr
Reverse recovery Time
VGS=0V,IS=300mA,VR=25V,
dI
S
/dt=-100A/μs
-- 31 -- nS
VSD
Forward on voltage
Tj=25℃，Is=0.1A，
-- -- 1.2 V
VDS=60V，VGS=0V，
f=1MHz
VDD=30V，ID=0.2A，
VGS=4.5V，RG=10Ω
Switching Characteristics
Source- Drain Diode Characteristics
Electrical Characteristics (TJ=25℃ unless otherwise noted)
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
R
DS(on)
Drain-Source On-State Resistance Ω
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
2N7002K
2
www.slkormicro.com