V
(BR)DSS
R
DS(on)
MAX
I
D
60 V
5K
@
10V
340mA
5.3K
@
4.5V
SOT-323
3
1.
2.
3.
GATE
SOURCE
DRAIN
1
2
N-Channel MOSFET
FEATURE
z
Highdensity celldesign for Low R
DS(on)
z
Voltagecontrolled smallsignal switch
z
Rugged andreliable
z
High saturation current capability
z
ESD protected
MARKING
APPLICATION
Load Switch for Portable Devices
DC/DC Converter
Equivalent Circuit
MOSFET MAXIMUM RATINGS (T
a
=25Я unless otherwise noted)
Symbol Parameter Value Unit
V
DS
Drain-Source Voltage 60
V
V
GS
Gate-Source Voltage ±20
V
I
D
Continuous Drain Current 340 mA
I
DM
Pulsed Drain Current(note1) 800 mA
P
D
Power Dissipation 0.2
W
T
j
Junction Temperature 150
Я
T
stg
Storage Temperature -55~+150
Я
R
șJA
Thermal Resistance from Junction to Ambient 625
Я/W
Plastic-Encapsulate MOSFETS
2N7002KW
1
www.slkormicro.com
MOSFET ELECTRICAL CHARACTERISTICS
T
a
=25
Š
unless otherwise specified
Parameter Symbol Test Condition Min Typ Max Unit
STATIC PARAMETERS
Drain-source Breakdown Voltage
V
(BR) DSS
V
GS
= 0V, I
D
=250μA
60
V
GateThreshold Voltage (note 2)
V
GS(th)
V
DS
=V
GS
, I
D
=1mA
1
1.3
2.5
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=48V,V
GS
= 0V
1
μA
Gate-Source Leakage Current
I
GSS
V
GS
=±20V, V
DS
= 0V
±10 μA
Drain-Source On-Resistance (note 2)
R
DS(on)
V
GS
=4.5V, I
D
=200mA
1.1 5.3
��
V
GS
=10V, I
D
=500mA
0.9
5
Ω
DYNAMIC PARAMETERS (note 3)
Input Capacitance
C
iss
V
DS
=10V,V
GS
=0V,f =1MHz
40 pF
Output Capacitance C
oss
30 pF
Reverse Transfer Capacitance
C
rss
10 pF
SWITCHING PARAMETERS(note 3)
Turn-on Delay Time
t
d(on)
V
GS
=10V,V
DD
=50V, R
G
=50ȍ
R
GS
=50ȍ, R
L
=250ȍ
10 ns
Turn-off Delay Time
t
d(off)
15 ns
Reverse Recovery Time
t
rr
V
GS
=0V,I
S
=300mA,V
R
=25V,
dIs/dt=-100A/us
30 ns
Recovered Charge Qr
V
GS
=0V,I
S
=300mA,V
R
=25V
dIs/dt=-100A/us
30 nC
GATE-SOURCE ZENER DIODE
Gate-Source Breakdown Voltage
BV
GSO
Igs=1mA(Open Drain)
21.5 30
V
DRAIN-SOURCE DIODE
Diode Forward Voltage(note 2) V
SD
I
S
=300mA, V
GS
= 0V
1.5
V
Continuous Diode Forward Current
I
S
0.2
A
Pulsed Diode Forward Current(note1)
I
SM
0.53
A
Notes :
1. Repetitive rating
˖
Pluse width limited by junction temperature.
2.
Pulse Test : Pulse width 300μs, duty cycle2%.
3.
Guaranteed by design, not subject to production testing.
2N7002KW
2
www.slkormicro.com