NovuSiC
1200V 75mΩ SiC MOSFET
Maximum Ratings @Tc=25°C (unless otherwise specified)
Features
• High blocking voltage with low On-resistance
• High speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
Package
V
DS
=
1200V
I
D
@25°C
=
47
A
R
DS(on)
=
75
mΩ
1 3
Applications
• PV Inverters
• Charging Piles
• Energy storage systems
• Industrial power supply
• Industrial Motors
Marking
Inner circuit
NC1M120C75HT
Datasheet
Rev. 2.0, Sept 2023
www.novusem.com
1/11
© 2023 Novus Semiconductors Co., Ltd. – All rights reserved.
2 4
Drain
(1)
Power
Source
(2)
Driver
Source
(3)
Gate
(4)
C1M120C75
YWW
AXXX
C1M120C75
Y
WW
A
XXX
=
=
=
=
=
Specific device
Year code
Work week
Assembly location
Serial code
Parameter
Symbol
T
est conditions Values Unit
D
rain-Source Voltage
V
DSmax
V
GS
=0V, I
D
=100μA 1200 V
Gate
-Source Voltage
V
GSop
Static
-5/+20
V
Maximum Gate
-Source Voltage
V
GSmax
Static
-8/+22
V
Continuous Drain Current
I
D
V
GS
=20V, T
c
=25°C
47
A
V
GS
=20V, T
c
=100°C
33
Pulsed Drain Current
I
D(pulse)
Pulse width tp limited by T
jmax
70
A
Power Dissipation
P
D
T
C
=25°C, T
j
=175°C
288
W
O
perating Junction Range
T
j
-55 to +
175
°C
Storage
Temperature Range
T
stg
-
55 to +175
°C
Electrical Characteristics @Tc=25°C (unless otherwise specified)
Parameter
Symbol
Conditions
Values
Unit
min. typ.
max.
Drain
-
Source Breakdown Voltage
V
(BR)DSS
V
GS
=0V, I
D
=100μA 1200 - - V
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
, I
D
=5mA 2.0 2.8 3.5
V
V
DS
=V
GS
, I
D
=5mA, T
j
=175°C
- 1.9 -
Zero Gate Voltage Drain Current
I
DSS
V
DS
=1200V, V
GS
=0V - 1 100
μA
Gate
-Source Leakage Current
I
GSS
V
GS
=20V, V
DS
=0V - 10 100
nA
Drain
-Source On-State
Resistance
R
DS(on)
V
GS
=20V, I
D
=20A - 75 90
mΩ
V
GS
=20V, I
D
=20A, T
j
=175°C
- 133 -
V
GS
=18V, I
D
=20A - 82 120
V
GS
=18V, I
D
=20A, T
j
=175°C
- 137 -
Transconductance
g
fs
V
DS
=20V, I
DS
=20A - 10 -
S
V
DS
=20V, I
DS
=20A, T
j
=175°C
- 11 -
Turn
-On Switching Energy
(Body Diode FWD)
E
on
V
DS
=800V,
V
GS
=-5V/20V, I
D
=20A,
R
G(ext)
=2.5Ω, L=200μH,
T
j
=25°C
FWD=NC1M120C75HT
- 343 -
μJ
Turn
-Off Switching Energy
(Body Diode FWD)
E
off
- 97 -
Turn
-On Delay Time
t
d(on)
V
DD
=800V,
V
GS
=-5V/20V,
I
D
=20A,
R
G(ext)
=2.5Ω, L=200μH
- 6 -
ns
Rise Time
t
r
- 22 -
Turn
-Off Delay Time
t
d(off)
- 20 -
Fall Time
t
f
- 10 -
Gate to Source Charge
Q
gs
V
DS
=800V,
V
GS
=-5V/20V,
I
D
=20A
- 35 -
nC
Gate to Drain Charge
Q
gd
- 25 -
Total Gate Charge
Q
g
- 87 -
Input Capacitance
C
iss
V
GS
=0V, V
DS
=1000V
f=1MHz
V
AC
=25mV
- 1450 -
pF
Output Capacitance
C
oss
- 66 -
Reverse Transfer Capacitance
C
rss
- 13 -
C
OSS
Stored Energy
E
oss
- 40 -
μJ
Internal Gate Resistance
R
G(int)
f=1MH
z, V
AC
=25mV - 2.4 -
Ω
Datasheet
Rev. 2.0, Sept 2023
www.novusem.com
2/11
© 2023 Novus Semiconductors Co., Ltd. – All rights reserved.
NC1M120C75HT