Features
•
1700-
V
olt Schottky R
ectier
•
Z
ero R
ev
erse R
eco
v
ery Current
•
Z
ero F
orw
ard R
eco
v
ery V
oltage
•
High-Frequency Oper
ation
•
T
emper
ature-
Independent S
witching Beha
vior
•
Extremely F
ast S
witching
•
Halogen-Free; R
oHS Compliant
Benets
•
R
eplace Bipolar with Unipolar Rectiers
•
Essentially No S
witching Losses
•
Higher Efciency
•
R
eduction of Heat Sink Requirements
•
P
arallel Devices Without Thermal Runaway
Maximum Ratings
Symbol Parameter Value Unit Test Conditions Note
V
RRM
R
epetitive Peak Reverse Voltage 1700 V
V
RSM
Surge Peak Reverse Voltage 1700 V
V
D
C
DC Blocking V
oltage 1700 V
I
F
Continuous F
orward Current 14.4 A T
C
<135˚C
I
FRM
R
epetitive Peak Forward Surge Current
45
26
A
T
C
=25˚C, t
P
=10 ms, Half Sine W
ave, D=1
T
C
=110˚C, t
P
=10 ms, Half Sine W
ave, D=1
I
FSM
Non-Repetitive Peak Forward Surge
Current
55
41
A
T
C
=25˚C, t
P
=10ms, Half Sine Wave, D=1
T
C
=110˚C, t
P
=10 ms, Half Sine Wave, D=1
P
tot
P
ower Dissipation
231
100
W
T
C
=25˚C
T
C
=110˚C
T
c
Maximum Case T
emperature 135 ˚C
T
J
Oper
ating Junction Range
-55 to
+175
˚C
T
stg
Stor
age T
emper
ature R
ange
-55 to
+135
˚C
T
O-247 Mounting T
orque
1
8.8
Nm
lbf
-in
M3 Screw
6-32 Screw
P
ackage
TO247-2L
HC3D10170H
ELECTRONICS CO.,LTD
Silicon Carbide Schottky Diode
HUAXUANYANG HXY
Part Number Package Marking
HC3D10170H TO247-2L HC3D10170H
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD
PIN1
PIN2
CA
SE
0
2
4
6
8
1
0
12
14
16
18
20
0 1 2 3 4 5 6 7
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
V
F
F
orward Voltage
1.7
3
2
3.5
V
I
F
= 10 A T
J
=25°C
I
F
= 10 A T
J
=175°C
I
R
R
ev
erse Current
20
100
60
300
μA
V
R
= 1700 V T
J
=25°C
V
R
= 1700 V T
J
=175°C
Q
C
T
otal Capacitive Charge 96 nC
V
R
= 1700 V
, I
F
= 10 A
di/dt = 200 A/μs
T
J
= 25°C
C T
otal Capacitance
827
78
41
pF
V
R
= 0 V
, T
J
= 25°C, f = 1 MHz
V
R
= 200 V, T
J
= 25˚C, f = 1 MHz
V
R
= 800 V
, T
J
= 25˚C, f = 1 MHz
Note:
1.
This is a majorit
y carrier diode, so there is no rev
erse reco
v
ery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit
R
θJC
Thermal R
esistance from Junction to Case 0.65 °C/W
Figure 1. F
orward Characteristics
0
1
2
3
4
5
0
2
50 500 750 1000 1250 1500 1750 2000 2250
Figure 2. R
everse Characteristics
I
F
(A)
V
F
(V)
I
R
(μA)
V
R
(V)
T
J
=-55°C
T
J
= 25°C
T
J
= 75°C
T
J
=125°C
T
J
=175°C
T
J
=-55°C
T
J
= 25°C
T
J
= 75°C
T
J
=125°C
T
J
=175°C
HC3D10170H
ELECTRONICS CO.,LTD
Silicon Carbide Schottky Diode
HUAXUANYANG HXY
www.hxymos.com
Shenzhen HuaXuanYang Electronics CO.,LTD
Typical Performance