P3M06040K3 SiC MOS
N-Channel Enhancement Mode
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Ver. C.0 May. 2022
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SiC MOS P3M06040K3
N-Channel Enhancement Mode
Features
Qualified to AEC-Q101
High Blocking Voltage with Low On-Resistance
High-Frequency Operation
Ultra-Small Q
gd
100% UIS tested
Benefits
Improve System Efficiency
Increase Power Density
Reduce Heat Sink Requirements
Reduction of System Cost
Applications
Solar Inverters
EV Battery Chargers
High Voltage DC/DC Converters
Switch Mode Power Supplies
Order Information
Part Number Package Marking
P3M06040K3 TO-247-3 P3M06040K3
V
RRM
=650V
I
D
=68 A
I
D
(100℃) = 48 A
R
DS(on)
=40 mΩ
Gate 1
Drain 2
Source 3
TO-247-3
1
2
3
www.pnjsemi.com
Ver. C.0 May. 2022
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14
P3M06040K3 SiC MOS
N-Channel Enhancement Mode
Contents
Features....................................................................................................... 1
Benefits........................................................................................................ 1
Applications................................................................................................1
Order Information....................................................................................1
Contents .....................................................................................2
1. Maximum Ratings............................................................................... 3
2. Electrical Characteristics....................................................................4
3. Reverse Diode Characteristics.........................................................6
4. Thermal Characteristics..................................................................... 6
5. Typical Performance...........................................................................7
6. Definitions............................................................................................12
7. Package Outlines...............................................................................13