No
tes:
Thermal resistance from juncti
on to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
Maximum RMS Voltage
30
Item
Rep
e
titive
Pe
a
k
Reverse
Voltage
S
y
mbol
Unit Test Conditions
Average Forward Current
Surge(Non-repetitive)Forward
Current
Operation Junction and
Storage Temperature Range
V
RRM
I
F(AV)
I
FSM
℃
T
J
,T
STG
V
RMS
V
V
A
A
-55
~
+150
Item
S
y
mbol Unit T
est Condition
Between junction and ambient
Between junction and terminal
Thermal
Resistance(Typical)
I
F
=1.0A
Peak Fo
rward Voltage
Electrical Characteristics (T=25℃ Unless otherwise specified）
1.3
10
100
25
1.0
Peak Reverse Current
I
RRM1
I
RRM2
T
a
=2
5℃
T
a
=125℃
R
θ
J-A
R
θ
J-L
V
F
V
℃/
W
V
RM
=V
RRM
Limiting Values(Absolute Maximum Rating)
50
35 70 140 280 420 560
700
100
200
400
600
800
1000
μ
A
Maximum reverse recovery
time
=0.25A
t
rr
ns I
F
=0.5A,I
R
=1.0A,I
rr
150
500
250
RS1AL THRU RS1ML
Fast Recovery Rectifier Diodes
Features
●I
F(AV)
1A
● 50V-1000V
●High surge
current capability
Application
s
● Rectifier
Marking
Polarity: Color band denotes cathode
●
VRRM
1
60Hz Half-sine wave，
Resistance load， ℃
60Hz Half-sine wave，
1 cycle，Ta=25℃
SOD-123FL Plastic-Encapsulate Diodes
SOD-1 23FL
RS1
AL
BL DL GL JL KL ML
Ta=90
70
RS1
AL
BL DL GL JL KL ML
●
R1X
X
:
From A To M
Typical
Characteristics
2
0
50 150
FIG.1: FORWARD CURRENT DERATING CURVE
IO(A)
Resistive or Inductive Load
P.C.B. Mounted on 0.2"×0.2"
(5.0mm×5.0mm)Copper Pad Areas
Ta( )
100
0.2
0.4
0.6
0.8
1.0
0
IFSM(A)
N
umber of Cycles
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
VR
D
RL
IF
0
IF
IR
IRR
t
trr
I
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
FIG.4 TYPICAL REVERSE CHARACTERISTICS
Voltage(%)
IR
(uA)
Tj=25
Tj=150
Tj=100
0.01
0
20
40 60 80 100
0.1
1.0
10
100
I
F
(A
)
FIG.3: TYPICAL FORWARD CHARACTERISTICS
0.01
VF(V)
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
TJ=25
Pulse width=300us
1% Duty Cycle
0.1
1.0
10
100
1 10 100
5
30
10
15
20
25
8
.3ms Single Half Sine Wave
JEDEC Method