MPSW60M041
marching-power© Copyright reserved
Ver1.1
APPLICATIONS
⚫ Switch Mode Power Supply (SMPS)
⚫ Uninterruptible Power Supply (UPS)
⚫ Power Factor Correction (PFC)
⚫ AC to DC Converters
Ordering Information
Type NO.
Marking
Package Code
MPVA7N65G
MPVA7N65G
TO
-220F
Absolute
Maximum Ratings T
C
= 25ºC, unless otherwise noted
Parameter
Symbol Value Unit
Drain
-Source Voltage (V
GS
= 0V) V
DSS
650 V
Cont
inuous Drain Current
(T
C
=25ºC ) I
D
7.0 A
(T
C
=100ºC) I
D
4.0 A
Pulsed
Drain Current (note1) I
DM
28 A
Gate
-Source Voltage V
GSS
±30
V
Single Pulse Avalanche Energy (note2)
E
AS
230 mJ
Avalanche
Current (note1) I
AR
7 A
Repetitive
Avalanche Energy (note1) E
AR
21.7 mJ
Power
Dissipation (T
C
= 25ºC) P
D
46 W
Operating
Junction and Storage Temperature Range T
J
, T
stg
150, -55~+150 ºC
Thermal Resistance
Parameter
Symbol
Value(Max)
Unit
Thermal
Resistance, Junction-to-Case R
thJC
4.16
ºC
/W
Thermal
Resistance, Junction-to-Ambient R
thJA
62.5
1
Ver1.0
MPVA7N65G
Power MOSFET
FEATURES
⚫ BV
DSS
: 650V, I
D
=7A
⚫ R
DS(on)
: 1.5Ω(Max) @V
GS
=10V
⚫ Very Low FOM (R
DS(on)
*Q
g
)
⚫ Excellent stability and uniformity
G
D
S
TO-220F
G
S
D
MPSW60M041
marching-power© Copyright reserved
Ver1.1
Specifications
T
J
= 25ºC, unless otherwise noted
Parameter
Symbol Test Conditions
Value
Unit
Min. Typ. Max.
Static
Drain
-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0V, I
D
= 250µA 650 -- -- V
Zero
Gate Voltage Drain Current I
DSS
V
DS
= 650V, V
GS
= 0V, T
J
= 25ºC -- -- 1 μA
Gate
-Source Leakage I
GSS
V
GS
= ±30V
-- --
±100
nA
Gate
-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250µA 2.0 -- 4.0 V
Drain
-Source On-
Resistance (Note4)
R
DS(on)
V
GS
= 10V, I
D
= 3.5A -- 1.1 1.5 Ω
Dynamic
Input
Capacitance C
iss
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
-- 1050 --
pF
Output
Capacitance C
oss
-- 84 --
Reverse
Transfer Capacitance C
rss
-- 12 --
Total
Gate Charge Q
g
V
DD
= 520V, I
D
= 7.0A,
V
GS
= 10V
-- 21 --
nC
Gate
-Source Charge Q
gs
-- 4.8 --
Gate
-Drain Charge Q
gd
-- 6.5 --
Turn
-on Delay Time t
d(on)
V
DD
= 325V, I
D
= 7.0A,
R
G
= 25Ω
-- 29 --
ns
Turn
-on Rise Time t
r
-- 48 --
Turn
-off Delay Time t
d(off)
-- 39 --
Turn
-off Fall Time t
f
-- 33 --
Drain
-Source Body Diode Characteristics
Continuous
Body Diode Current I
S
T
C
= 25ºC
-- -- 7
A
Pulsed
Diode Forward Current I
SM
-- -- 28
Body
Diode Voltage V
SD
T
J
= 25ºC, I
SD
= 7.0A, V
GS
= 0V -- -- 1.4 V
Reverse
Recovery Time t
rr
V
R
= 400V, I
F
= 7.0A,
di
F
/dt = 100A/μs
-- 365 -- ns
Reverse
Recovery Charge Q
rr
-- 3.4 -- μC
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
AS
= 2A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
4. Essentially independent of operating temperature
2
Ver1.0
MPVA7N65G
Power MOSFET