www.jscj-elec.com AD-DMMT5551S
Version 1.0
1
/
5
2021-07-01
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
AD-DMMT5551S Plastic-Encapsulated Transistor
AD-DMMT5551S Dual transistor (NPN + NPN)
FEATURES
Epitaxial planar die construction
Ideal for medium power amplification and switching
AEC-Q101 qualified
MARKING:
5551S
www.jscj-elec.com AD-DMMT5551S
Version 1.0
2
/
5
2021-07-01
MAXIMUM RATINGS (T
j
= 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector-base voltage
V
CBO
180
V
Collector-emitter voltage
V
CEO
160
V
Emitter-base voltage
V
EBO
6
V
Collector continuous current
I
C
600
mA
Collector power dissipation
P
C
300
mW
Thermal resistance from junction to ambient
R
θJA
416
°C/W
Operating junction and storage temperature range
T
j
, T
stg
-55 ~ 150
°C
ELECTRICAL CHARACTERISTICS (T
j
= 25°C unless otherwise specified)
Parameter
Symbol
Test condition
Max
Unit
Collector-base breakdown voltage
V
(BR)CBO
I
C
= 100µA, I
E
= 0A
-
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= 1mA, I
B
= 0A
-
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
= 10µA, I
C
= 0A
-
V
Collector cutoff current
I
CBO
V
CB
= 120V, I
E
= 0A
50
nA
Emitter cutoff current
I
EBO
V
EB
= 4V, I
C
= 0A
50
nA
DC current gain
h
FE1
V
CE
= 5V, I
C
= 1mA
-
-
h
FE2
V
CE
= 5V, I
C
= 10mA
300
-
h
FE3
V
CE
= 5V, I
C
= 50mA
-
-
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 10mA, I
B
= 1mA
0.15
V
I
C
= 50mA, I
B
= 5mA
0.2
Base-emitter saturation voltage
V
BE(sat)
I
C
= 10mA, I
B
= 1mA
1
V
I
C
= 50mA, I
B
= 5mA
1
Transition frequency
f
T
V
CE
= 10V, I
C
= 10mA, f = 100MHz
300
MHz
Collector output capacitance
C
ob
V
CB
= 10V, I
E
= 0A, f = 1MHz
6
pF