CS9N50A
N-Channel Enhancement Mode Power MOSFET
MAIN CHARACTERISTICS
I
D
9A
V
DSS
500V
R
DSON
-typ
（@V
GS
=10V）
0.68Ω
FEATURES
• Fast Switching
• Low ON Resistance
• Low Gate Charge
• 100% Single Pulse avalanche energy Test
APPLICATIONS
• Power switch circuit of adaptor and charger.
MECHANICAL DATA
• Case: Molded plastic
• Mounting Position: Any
• Molded Plastic: UL Flammability Classification Rating 94V-0
• Lead free in compliance with EU RoHS 2011/65/EU directive
• Solder bath temperature 275℃ maximum,10s per JESD 22-B106
Product specification classification
Part Number Package Mode Name Pack
CS9N50A1 TO-220AB CS9N50A Tube
CS9N50A2 TO-220F(0.5mm) CS9N50A Tube
CS9N50A3 TO-263 CS9N50A Tube
CS9N50A3-R TO-263 CS9N50A Tape
CS9N50A4 TO-251 CS9N50A Tube
CS9N50A5-R TO-252 CS9N50A Tape
TO-220F
TO-220AB
TO-263
TO-252
TO-251
www.lxmicro.com 1 Of 5 LingXun Rev:01
CS9N50A
N-Channel Enhancement Mode Power MOSFET
Maximum Ratings at Tc=25°C unless otherwise specified
Characteristics Symbol
Value
Unit
220AB/263 220F 251/252
Drain-Source Voltage V
DS
500 V
Gate-Source Voltage V
GS
±
30
V
Continue Drain Current
I
D
9 A
Pulsed Drain Current (Note1)
I
DM
32 A
Power Dissipation
P
D
100 35 100 W
Single Pulse Avalanche Energy
(Note1)
E
AS
440
mJ
Operating Temperature Range T
J
150 °C
Storage Temperature Range
T
STG
-55 to +150 °C
Thermal Resistance, Junction to Case
R
θ
JC
1.25 3.57 1.25 °C/W
Thermal Resistance, Junction to
Ambient
R
θ
JA
62.5 62.5 62.5 °C/W
Note1:Pulse test: 300 µs pulse width, 2 % duty cycle
Electrical Characteristics at Tc=25°C unless otherwise specified
Characteristics Test Condition Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage
V
GS
= 0 V,I
D
= 250 µA BV
DSS
500 - - V
Drain-Source Leakage Current V
DS
= 500 V, V
GS
= 0 V I
DSS
- - 1
µA
Gate Leakage Current V
GS
= ± 30 V, V
DS
= 0 V I
GSS
- -
±
100
nA
Gate-Source Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA V
GS(th)
2 - 4
V
Drain-Source On-State Resistance
V
GS
= 10 V, I
D
= 4 A R
DS(on)
- 0.68 0.85
Ω
Forward Transconductance
V
DS
= 15 V, I
D
= 4 A
gfs - 7 -
S
Input Capacitance
V
GS
= 0 V, V
DS
= 25 V,
f = 1 MHz
C
iss
- 891 -
pF
Output Capacitance C
oss
- 110 -
pF
Reverse Transfer Capacitance
C
rss
- 7 -
pF
Turn-on Delay Time(Note2)
I
D
= 8 A, V
DD
= 250V,
R
G
= 10 Ω
t
d(ON)
- 18 -
ns
Rise Time(Note2)
t
r
- 20 -
ns
Turn-Off Delay Time(Note2) t
d(OFF)
- 44 -
ns
Fall Time(Note2) t
f
- 15 -
ns
Total Gate Charge(Note2)
I
D
= 8 A, V
DD
= 400 V,
V
GS
= 10 V
Q
G
- 22 -
nC
Gate to Source Charge(Note2)
Q
GS
- 5 -
nC
Gate to Drain Charge(Note2)
Q
GD
- 9 -
nC
Source-Drain Diode Characteristics at Ta=25°C unless otherwise specified
Characteristics Test Condition Symbol Min. Typ. Max. Unit
Maximun Body-Diode Continuous
Current
TC = 25 °C
I
S
- - 9
A
Maximun Body-Diode Pulsed
Current(Note2)
I
SM
- - 32
A
Drain-Source Diode Forward Voltage
I
SD
= 8 A V
SD
- - 1.4
V
Reverse Recovery Time(Note2)
IS=8A,Tj = 25℃
dIF/dt=100A/us, VGS=0V
trr - 340 -
ns
Reverse Recovery Charge(Note2) Qrr - 1.7 -
μC
Note2:Pulse test: 300 µs pulse width, 2 % duty cycle
www.lxmicro.com 2 Of 5 LingXun Rev:01