CS10N60A
N-Channel Enhancement Mode Power MOSFET
MAIN CHARACTERISTICS
I
D
10A
V
DSS
600V
R
DSON
-typ
（@V
GS
=10V）
0.7Ω
FEATURES
• Fast Switching
• Low ON Resistance
• Low Gate Charge TO-220F TO-220C
• 100% Single Pulse avalanche energy Test
APPLICATIONS
• Power switch circuit of adaptor and charger.
MECHANICAL DATA
• Case: Molded plastic
• Mounting Position: Any
• Molded Plastic: UL Flammability Classification Rating 94V-0
• Lead free in compliance with EU RoHS 2011/65/EU directive
• Solder bath temperature 275℃ maximum,10s per JESD 22-B106
Product specification classification
Part Number Package Mode Name Pack
CS10N60A2 TO-220F(0.5mm) CS10N60A Tube
CS10N60A8 TO-220F(1.3mm) CS10N60A Tube
CS10N60A9 TO-220C CS10N60A Tube
CS10N60A3 TO-263 CS10N60A Tube
CS10N60A3-R TO-263 CS10N60A Tape
TO-263
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CS10N60A
N-Channel Enhancement Mode Power MOSFET
Maximum Ratings at Tc=25°C unless otherwise specified
Characteristics Symbol
Value
Unit
220F 220C/263
Drain-Source Voltage V
DS
600 V
Gate-Source Voltage V
GS
±
30
V
Continue Drain Current
I
D
10 A
Pulsed Drain Current (Note1)
I
DM
40 A
Power Dissipation
P
D
40 130 W
Single Pulse Avalanche Energy (Note1) E
AS
580
mJ
Operating Temperature Range T
J
150 °C
Storage Temperature Range
T
STG
-55 to +150 °C
Thermal Resistance, Junction to Case
R
θ
JC
3.13 0.96 °C/W
Thermal Resistance, Junction to
Ambient
R
θ
JA
62.5 62.5 °C/W
Note1:Pulse test: 300 µs pulse width, 2 % duty cycle
Electrical Characteristics at Tc=25°C unless otherwise specified
Characteristics Test Condition Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage
V
GS
= 0 V,I
D
= 250 µA BV
DSS
600 - - V
Drain-Source Leakage Current
V
DS
= 600 V, V
GS
= 0 V I
DSS
- - 1
µA
Gate Leakage Current
V
GS
= ± 30 V, V
DS
= 0 V I
GSS
- -
±
100
nA
Gate-Source Threshold Voltage V
DS
= V
GS
, I
D
= 250 µA V
GS(th)
2 - 4
V
Drain-Source On-State Resistance V
GS
= 10 V, I
D
= 5 A R
DS(on)
- 0.7 0.9
Ω
Forward Transconductance
V
DS
= 15 V, I
D
= 5 A
gfs - 9.5 -
S
Input Capacitance
V
GS
= 0 V, V
DS
= 25 V,
f = 1 MHz
C
iss
- 1609 -
pF
Output Capacitance
C
oss
- 136 -
pF
Reverse Transfer Capacitance C
rss
- 8 -
pF
Turn-on Delay Time(Note2)
I
D
= 10 A, V
DD
= 300 V,
R
G
= 10 Ω
t
d(ON)
- 26 -
ns
Rise Time(Note2)
t
r
- 23 -
ns
Turn-Off Delay Time(Note2)
t
d(OFF)
- 49 -
ns
Fall Time(Note2)
t
f
- 27 -
ns
Total Gate Charge(Note2)
I
D
= 10 A, V
DD
= 480 V,
V
GS
= 10 V
Q
G
- 32 -
nC
Gate to Source Charge(Note2) Q
GS
- 8 -
nC
Gate to Drain Charge(Note2)
Q
GD
- 12 -
nC
Source-Drain Diode Characteristics at Ta=25°C unless otherwise specified
Characteristics Test Condition Symbol Min. Typ. Max. Unit
Maximun Body-Diode Continuous
Current
I
S
- - 10
A
Maximun Body-Diode Pulsed
Current(Note2)
I
SM
- - 40
A
Drain-Source Diode Forward Voltage
I
SD
= 10 A V
SD
- - 1.4
V
Reverse Recovery Time(Note2)
I
SD
= 10 A, V
GS
= 0 V,
dI
F
/ dt = 100 A/µs
trr - 500 -
ns
Reverse Recovery Charge(Note2) Qrr - 3 -
μC
Note2:Pulse test: 300 µs pulse width, 2 % duty cycle
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