*%8/
18Mar22
GBU806L Rev 1.1
3,11,1*
0D[LPXP5DWLQJV DQG (OHFWULFDO FKDUDFWHULVWLFV
5DWLQJVDW&DPELHQWWHPSHUDWXUHXQOHVVRWKHUZLVHVSHFLILHG
6LQJOHSKDVHKDOIZDYH+]UHVLVWLYHRULQGXFWLYHORDGIRUFDSDFLWLYHORDGFXUUHQWGHUDWHE\
3DUDPHWHU 6\PEROV
*%8/
8QLWV
0D[LPXP 5HSHWLWLYH 3HDN 5HYHUVH 9ROWDJH
9
550
6
9
0D[LPXP 506 YROWDJH
9
506
42
9
0D[LPXP '& %ORFNLQJ 9ROWDJH
9
'&
6
9
$YHUDJH 5HFWLILHG 2XWSXW &XUUHQW
,
R
$
3HDN )RUZDUG 6XUJH &XUUHQW PV 6LQJOH
+DOI 6LQH :DYH 6XSHULPSRVHG RQ 5DWHG
/RDG -('(& 0HWKRG
,
)60
$
0D[LPXP)RUZDUG9ROWDJHDW4$
9
)
0.95 9
0D[LPXP '& 5HYHUVH &XUUHQW #7$ &
DW 5DWHG '& %ORFNLQJ 9ROWDJH #7$ &
,
5
ȝ$
7\SLFDO -XQFWLRQ &DSDFLWDQFH˄1RWH˅
&
M S)
2SHUDWLQJ DQG 6WRUDJH 7HPSHUDWXUH 5DQJH
7
M
7
VWJ a50 &
1RWH 0HDVXUHG DW 0+] DQG DSSOLHG UHYHUVH YROWDJH RI 9'&
0RXQWHGRQJODVVHSR[\3&ERDUGZLWKר（×FP）FRSSHUSDG
3,1 '(6&5,37,21
,QSXW 3LQ˄a˅
,QSXW 3LQ˄a˅
2XWSXW $QRGH˄˅
2XWSXW &DWKRGH˄˅
:RUOG,QWHUQDWLRQDO（
&KLQD）
/LPLWHG
W
YXWW
GBU 806L
-
~ ~
+
)HDWXUHV
• Glass Passivated Chip Junction
• Low IRRM
• Low VF
• High VRRM
%HQHILWV
•
• Case: GBU
• Terminals: Solderable Per MIL-STD-750
Reduced power loss and switching transistor
5HGXFHGVQXEELQJ
Low VF Bridge Rectifiers
8.0
120
25
(China) Limited
World
International
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
GBU806L Rev 1.1 2 World International（
China）
Limited
GBU806L
18-Mar-2022
Capacitance (pF)
75 100
Tc, Case Temp (
o
C)
Current Derating, Case
Reverse Voltage (V)
Typical Junction Capacitance
300
VR, Reverse Voltage (Volts)
Typical Reverse Current
If, Average Forward Current (A)
100
T
J
=25°C
10
1
0.1 1.0 10 1
00
10
8
6
4
0
0 175
2
25
50 125
1
50
0
.5 1.0 1.5
Vf, Instantaneous Forward Voltage (V)
Typical
Forward
Voltage
If,
Instantaneo
us
Forward
Current
(A)
100
10
1.0
p
ulse with 30
0μs
1% duty cycle
0.10
0.0
2.0
Tj=25℃
Tj=125℃
Ir, Reverse Current (nA)
1050
900
750
600
450
300
150
8.3 ms Single Half Sine Wave
(JEDEC Metho
d)
00
100
600
(China) Limited
World
International