DCY 642U06
DFN2510
4 Channel Ultra-Low Capacitance ESD Protection Diod
e
Datasheet
1. Features 2. Pin Description
Ultra-Low capacitance:0.45pF(typ.)
Reverse stand-off voltage:5V
IEC 61000-4-2 (Air): ±20KV
IEC 61000-4-2 (Contact): ±20KV
3. Applications 4. Schematic Diagram
USB 3.0, USB 2.0
HDMI 1.3/1.4, Display Port 1.3, eSATA
Unified Display Interface (UDI)
Digital Visual Interface (DVI)
High speed serial interfaces
Top View
5. Order Information
Type Package Size (mm) Delivery Form
Delivery Quantity
DCYT642U06 DFN2510 2.50x1.00x0.50
7 T&R
3,000
6.
Limiting Values(T
A
= 25 °C, unless otherwise specified)
Symbol Parameter Conditions
Min Max Unit
V
ESD
Electrostatic Discharge Voltage
IEC 61000-4-2; Contact Discharge - ±20 kV
IEC 61000-4-2; Air Discharge - ±20 kV
P
PP
Peak Pulse Power t
P
= 8/20 µs - 63 W
I
PPM
Rated Peak Pulse Current t
P
= 8/20 µs - 4.5 A
T
A
Ambient Temperature Range - -55 125
T
stg
Storage Temperature Range - -55 150
T
1
Product Datasheet www. dcy-china .com 07-Apr-2021 Reversion:0.3
2
7. Electrical Characteristics(T
A
= 25 °C unless otherwise specified)
Symbol Parameter Conditions
Min Typ. Max Unit
V
RWM
Reverse Working Voltage T
A
= 25 °C - - 5 V
V
BR
Breakdown Voltage I
R
= 1 mA; T
A
= 25 °C 6 - - V
I
R
Reverse Leakage Current V
RWM
= 5V; T
A
= 25 °C - - 100 nA
V
C
Clamping Voltage
I
PP
=1A,t
P
=8/20µs, Any I/O to
GND , Positive
- - 9.8 V
I
PP
=4.5A,t
P
=8/20µs, Any I/O to
GND , Positive
- - 14 V
C
L
Junction Capacitance
V
R
= 0V, f = 1 MHz,I/O to I/O
-
0.22 0.3 pF
V
R
= 0V, f = 1 MHz, I/O to GND
-
0.45
0.6
pF
8.
Typical Characteristics
Fig.1 Peak Pulse Power Rating Curve Fig.2 Pulse Derating Curve
Fig.3 Pulse Waveform-8/20μs Fig.4 Pulse Waveform-ESD (IEC61000-4-2)
DCY 642U06
DFN2510
4 Channel Ultra-Low Capacitance ESD Protection Diod
e
Datasheet
T
Product Datasheet www. dcy-china .com 07-Apr-2021 Reversion:0.3