SS32B THRU SS3200B
Page :1
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Parameter
SYMBOLS
SS32B SS33B SS34B SS35B SS36B SS38B SS310B SS3150B SS3200B
UNITS
Maximum repetitive peak reverse voltage
V
RMM
20 30 40 50 60 80 100 150 200
V
Maximum R MS voltage
V
RMS
14 21 28 35 42 56 70 105 140
V
Maximum D C blocking voltage
V
DC
20 30 40 50 60 80 100 150 200
V
Maximum average forward rectified current
at TL (see fig.1)
I
(AV)
3.0
A
Peak forward surge current
8.3ms single half sine-wave
superimposed onrated load (JEDEC Method)
I
FSM
80
A
Maximum instantaneous forward voltage at 3.0A
V
F
0.55 0.70 0.85 0.95
V
Maximum D Creversecurrent T
A
=25
at rated DCblock i ng voltage
T
A
=125
I
R
0.5 0.3
mA
5.0
3.0
Typical junction capacitance (NOTE 1)
C
J
450 400
pF
Typical thermal resistance (NOTE 2)
R
JA
60.0
℃/
W
Operating junction temperature range
T
J
-55 to +150
Storage temperature range
T
STG
-55 to +150
Note:
1.Measured at 1.0MHz and applied reverse voltage of 4.0V D.C.
2.
P.C.B.mounted with2.0x2.0”(5.0x5.0cm) copperpad areas.
3.The typical data above is for referenceonly.
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 100 Volts Forward Current - 3.0 Amperes
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
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SMB
FEATURES
MECHANICAL DATA
0.071 (1.80)
0.087 (2.20)
Case: JEDEC DO-214AA molded plastic body
Terminals: leads solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.003 ounce, 0.093 grams
Dimensions in inches and (millimeters)
0.180(4.57)
0.160(4.06)
0.155(3.94)
0.130(3.30)
DO-214AA
0.060(1.52)
0.030(0.76)
0.220(5.59)
0.200(5.08)
0.012(0.305)
0.006(0.152)
0.008(0.203)MAX.
0.096(2.44)
0.084(2.13)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds at terminals
SS32B THRU SS3200B
Page :2
Typical Characterisitics
The curve above is for reference only.
0.1
0
0.4 1.4
Fig.3 Typical Forward Characteristic
Instaneous Forward Current (A)
Instaneous Forward Voltage (V)
1.0
10
0.60.2 0.8 1.0 1.2 1.8
1.6
SS32B/SS34B
SS36B/SS38B
SS310B
SS3150B/SS3200B
20
1001
30
40
50
20
60
80
70
Fig.5 Maximum Non-Repetitive Peak
Forward Surge Current
Peak Forward Surge Current (A)
10
Number of Cycles at 60Hz
Fig.2 Typical Reverse Characteristics
Instaneous Reverse Current ( μA)
20 40 60 80
0
T
J
=25°C
T
J
=100°C
Percent of Rated Peak Reverse Voltage(%)
100
10
0
10
1
10
2
10
3
10
4
T
J
=75°C
SS32B/SS36B
SS38B~SS3200B
0.6
1.2
1.8
2.4
3.0
3.5
0.0
25 50
75
100 125 150
Fig.1 Forward Current Derating Curve
Average Forward Current (A)
0.01
100
1
10
100
Fig.6- Typical Transient Thermal Impedance
Transient Thermal Impedance°C/W
t, Pulse Durationsec
0.1 1 10
Case Temperature (°C)
Fig.4 Typical Junction Capacitance
Junction Capacitance (pF)
Reverse Voltage (V)
10
0.1 10
100
500
20
1001
1000
T
J
=25°C
200
SS32B~SS36B
SS38B~SS3200B
90
8.3 ms Single Half Sine Wave
(JEDEC Method)
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
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