SS8050W
NPN Type Bipolar Transistor
- 1 -
Rev.A02
www.salltech.com
`
`
Document:S13SD0001
Features
Low profile package
Ideal for automated placement
Power Dissipation of 200mW
Complimentary to SS8550W
High Stability and High Reliability
RoHS Compliant
Mechanical Data
Package: SOT-323
Lead Finish:Matte Tin
Case Material: “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 3 per J-STD-020
Tape Reel :3000pcs
Applications
amplifying signal
Electronic switch
Oscillating circuit
Variable resistance
Marking Information
Y1
Appearance & Symbol
Package：SOT-323
1：Base
2：Emitter
3：Collector
1
3
2
SS8050W
NPN Type Bipolar Transistor
- 2 -
Rev.A02
www.salltech.com
`
`
Document:S13SD0001
CLASSIFICATION OF
h
FE(1)
RANK
L
H
J
RANGE
120–200
200–350
300–400
Parameter
Symbol
Value
Units
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
25
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current - Continuous
I
C
1.5
A
Collector Power Dissipation
P
C
200
mW
Operating Junction temperature
T
J
-55 to +150
℃
Storage Temperature Range
T
STG
-55 to +150
℃
Parameter
Symbol
Test conditions
Min
Max
Unit
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
= 100μA, I
E
=0
40
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 0.1mA, I
B
=0
25
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=100μA, I
C
=0
5
V
Collector Emitter Cut-off Current
I
CEO
V
CE
=20V, I
E
=0
0.1
uA
Emitter Base Cut-off Current
I
EBO
V
EB
= 5V, I
C
=0
0.1
uA
Collector Base Cut-off Current
I
C
BO
V
CB
=40V, I
E
=0
0.1
uA
DC Current Gain
h
FE(1)
V
CE
=1V, I
C
= 100mA
120
400
h
FE(2)
V
CE
=1V, I
C
= 800mA
40
Collector-emitter saturation voltage
V
CE(sat)
I
C
=800mA, I
B
= 80mA
0.5
V
Base -emitter saturation voltage
V
BE(sat)
I
C
=800mA, I
B
= 80mA
1.2
V
Transition frequency
f
T
V
CE
=10V, I
C
=50mA,f=30MHz
100
MHz
Absolute Maximum Ratings (T=25℃ unless otherwise noted)
Electrical Characteristics (T=25℃ unless otherwise noted)