音特电子 ESD0524P
WWW.YINT.COM.CN VER4.0
1
Ultra Low Capacitance ESD Protection -ESD0524P
Description
The ESD0524P have a typical capacitance of only
0.35pF between I/O pins. This allows it to be used on
circuits operating in excess of 4GHz without signal
attenuation. They have been specifically designed to
protect sensitive components which are connected to
high-speed data and transmission lines from overvoltage
caused by ESD (electrostatic discharge), CDE (Cable
Discharge Events), and EFT (electrical fast transients).
They used to meet the ESD immunity requirements of
IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact
discharge).
Features
Case :DFN-10-2.5*1.0*0.6-0.5
Package design optimized for high speed lines
Low clamping voltage
Low capacitance :0.35 pF typical (I/O to I/O)
Protection four I/O Lines
Compatible with IEC 61000-4-2(ESD) :Air 15KV ,
Contact 8KV
Compatible with IEC 61000-4-4(EFT) :40A ,5/50 nS
Compatible with IEC 61000-4-5(Surge):5A ,8/20 uS
Applications
High Definition Multi-Media Interface (HDMI)
DisplayPort Interface
Digital Visual Interface (DVI)
eSATA Interfaces
MDDI Ports
PCI Express
Schematic and PIN Configuration
HDMI Port Protection
Display Port Protection
音特电子 ESD0524P
WWW.YINT.COM.CN VER4.0
2
Absolute Maximum Ratings
Parameter
Symbol
Value
Units
Peak Current (tp =8/20μs)
P
PK
150
W
Peak Current (tp =8/20μs)
I
PP
5
A
IEC61000-4-2 (Contact)
V
ESD
8
kV
IEC61000-4-2 (Air)
V
ESD
15
kV
Lead Soldering Temperature
T
L
260 (10 sec)
°C
Operating Temperature
T
J
-50 to +125
°C
Storage Temperature Range
T
STG
-50 to +150
°C
Electrical Characteristics (T =25°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Reverse Stand-off Voltage
V
RWM
Any I/O pin to ground
5
V
Reverse Breakdown Voltage
V
BR
It = 1mA
Any I/O pin to ground
6
V
Reverse Leakage Current
I
R
V
RWM
=5.0V, T=25
℃
Any I/O pin to ground
1
μA
Clamping Voltage
V
C
I
PP
= 1A, t
P
= 8/20μs
Any I/O pin to ground
8.5
12
V
Junction Capacitance
C
J
V
R
=0V, f = 1MHz
Between I/0 pins
0.35
pF