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AR3341P0SC

Low Capacitance Bi-directional TVS Diode

Description

The AR3341P0SC is a bi-directional TVS diode, utilizing

leading monolithic silicon technology to provide fast re-

sponse time and low ESD clamping voltage, making this

device an ideal solution for protecting voltage sensitive

high-speed data lines. The AR3341P0SC has a low ca-

pacitance with a typical value at 0.45pF, and complies

with the IEC 61000-4-2 (ESD) with ±30kV air and ±30kV

contact discharge. The small size, low capacitance and

high ESD surge protection make AR3341P0SC an ideal

choice to protect cell phone, digital visual interfaces,

HDMI, DVI, USB2.0, USB3.0, and other high speed ports.

Features

 low capacitance: 0.45pF typical

 Ultra low leakage: nA level

 Operating voltage: 3.3V

 Low clamping voltage

 2-pin leadless package

 Complies with following standards:

– IEC 61000-4-2 (ESD) immunity test

Air discharge: ±30kV

Contact discharge: ±30kV

– IEC61000-4-5 (Lightning) 10A (8/20μs)

 RoHS Compliant

Part Number Packaging Reel Size

AR3341P0SC 10000/Tape & Reel 7 inch

Equivalent Circuit and Pin Configuration

Mechanical Characteristics

 Package: DFN0603-2

 Case Material: “Green” Molding Compound.

 Terminal Connections: See Diagram Below

 Marking Information: See Below

Applications

 Cellular Handsets and Accessories

 Display Ports

 MDDI / MHL

 USB 2.0 / USB 3.0

 Digital Visual Interface (DVI)

 PCI Express and Serial SATA Ports

Marking Information

Ordering Information

Circuit and Pin Schematic

4S= Device Marking Code

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AR3341P0SC

Low Capacitance Bi-directional TVS Diode

Absolute Maximum Ratings (TA=25°C unless otherwise specified)

Electrical Characteristics (TA=25°C unless otherwise specified)

Parameter Symbol Value Unit

Peak Pulse Power (8/20µs) Ppk 96 W

Peak Pulse Current (8/20µs) IPP 10 A

ESD per IEC 61000−4−2 (Air)

ESD per IEC 61000−4−2 (Contact)

VESD

±30

Operating Temperature Range TJ −40 to +125 °C

Storage Temperature Range Tstg −55 to +150 °C

Parameter Symbol Min Typ Max Unit Test Condition

Reverse Working Voltage VRWM 3.3 V

Punch-Through Voltage VPT 3.5 V IPT = 2µA

Breakdown Voltage VBR 4 V IT = 1mA

Snap-Back Voltage VSB 2 V ISB = 50mA

Reverse Leakage Current I

0.5 μA VRWM = 3.3V

Clamping Voltage VC 8 9.6 V IPP = 10A (8 x 20µs pulse)

Junction Capacitance CJ 0.45 0.55 pF VR = 0V, f = 1MHz