GBU806L
18Mar22
GBU806L Rev 1.1
1
PINNING
Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Parameter Symbols
GBU806L
Units
Maximum Repetitive Peak Reverse Voltage
V
RRM
600
V
Maximum RMS voltage
V
RMS
420
V
Maximum DC Blocking Voltage
V
DC
600
V
Average Rectified Output Current
I
o
A
Peak Forward Surge Current 8.3 ms Single
Half Sine Wave Superimposed on Rated
Load (JEDEC Method)
I
FSM
A
Maximum Forward Voltage at 4.0 A
V
F
0.95 V
Maximum DC Reverse Current @TA=25 °C
at Rated DC Blocking Voltage @TA=125 °C
I
R
5
100
μA
Typical Junction Capacitance（Note1）
C
j pF
Operating and Storage Temperature Range
T
j
, T
stg -55 ~ +150 °C
Note: 1. Measured at 1MHz and applied reverse voltage of 4 VDC.
2.Mounted on glass epoxy PC board with 4×1.5¨1.5（3.81×3.81 cm）copper pad
PIN DESCRIPTION
1
Input Pin（~）
2
Input Pin（~）
3
Output Anode（+）
4
Output Cathode（-）
World International（
China）
Limited
W
YXWW
GBU 806L
-
~ ~
+
)HDWXUHV
• Glass Passivated Chip Junction
• Low IRRM
• Low VF
• High VRRM
%HQHILWV
•
• Case: GBU
• Terminals: Solderable Per MIL-STD-750
Reduced power loss and switching transistor
5HGXFHGVQXEELQJ
Low VF Bridge Rectifiers
8.0
120
25
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
GBU806L Rev 1.1
2
World International（China）Limited
GBU806L
18-Mar-2022
Capacitance (pF)
75 100
Tc, Case Temp (
o
C)
Current Derating, Case
Reverse Voltage (V)
Typical Junction Capacitance
300
VR, Reverse Voltage (Volts)
Typical Reverse Current
If, Average Forward Current (A)
100
T
J
=25°C
10
1
0.1 1.
0 10 100
10
8
6
4
0
0 175
2
25
50 125
1
50
0
.5 1.0 1.5
Vf, Instantaneous Forward Voltage (V)
Typical
Forward
Voltage
If,
Instantan
eous
Forward
Current
(A)
100
10
1.0
p
ulse with
300μs
1% duty cycle
0.10
0.0
2.0
Tj=25℃
Tj=125℃
Ir, Reverse Current (nA)
1050
900
750
600
450
300
150
8.3 ms Single Half Sine Wave
(JEDEC Met
hod)
00
100
600