PTD7N65
650V/7A N-Channel Advanced Power MOSFET
1
JinYu
www. htsemi. com V2.0
Semiconductor
2022/12
Features
• Improved dv/dt Capability, High Ruggedness
.
•
Maximum Junction Temperature Range (150°C)
•
100% Avalanche Tested
Applications
• Power factor correction（PFC）
• Switched mode power supplies(SMPS)
• Uninterruptible Power Supply（UPS）
Order Information
Product
Package
Marking
Reel Size
Reel
Carton
PTD7N65
TO-252
PTD7N65
13inch
2500PCS
50000PCS
Absolute Maximum Ratings
Symbol
Parameter
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
V
(BR)DSS
Drain-Source Breakdown Voltage
V
V
GS
Gate-Source Voltage
V
TJ
Maximum Junction Temperature
°C
TSTG
Storage Temperature Range
°C
IS
Diode Continuous Forward Current
TC
=25°C
A
Mounted on Large Heat Sink
EAS
Single Pulse Avalanche Energy (Note1)
mJ
IDM
Pulse Drain Current Tested (Sillicon Limit) (Note2)
TC
=25°C
A
ID
Continuous Drain current
TC
=25°C
A
PD
Maximum Power Dissipation
TC
=25°C
W
RθJc
Thermal Resistance Junction−to−Case (Note3)
°C/W
BVDSS
650
V
ID
7
A
RDSON@VGS=10V
1.1
Ω
TO-252
TO
PTD7N65
650V/7A N-Channel Advanced Power MOSFET
2
JinYu
www. htsemi. com V2.0
Semiconductor
2022/12
Note:
1. Limited by TJmax, starting TJ = 25° C, RG = 25Ω, VD =50V, VGS =10V. Part not recommended for use above this value.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. Surface Mounted on FR4 Board, t ≤ 10 sec.
4. Pulse Test: pulse width ≤ 300 us, duty cycle ≤ 2%.
5. Guranteed by design, not subject to production testing.
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
V
(BR)DSS
Drain- Source Breakdown Voltage
VGS=0V ID=250μA
650
--
--
V
I
DSS
Zero Gate Voltage Drain current
VDS=650V,VGS=0V
--
--
1
μA
I
GSS
Gate-Body Leakage Current
VGS=±30V,VDS=0V
--
--
±100
nA
V
GS(TH)
Gate Threshold Voltage
VDS=VGS,ID=250μA
2
3
4
V
R
DS(ON)
Drain-Source On-State Resistance (Note4)
VGS=10V, ID=3.5A
--
1.1
1.3
Ω
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) (Note5)
C
iss
Input Capacitance
VDS=25V,
VGS=0V,
F=1MHz
--
930
--
pF
C
oss
Output Capacitance
--
100
--
pF
C
rss
Reverse Transfer Capacitance
--
4.5
--
pF
Q
g
Total Gate Charge
VDS=520V,
ID=7A,
VGS=10V
--
16
--
nC
Q
gs
Gate-Source Charge
--
4
--
nC
Q
gd
Gate-Drain Charge
--
3.6
--
nC
Switching Characteristics (Note5)
t
d(on)
Turn-on Delay Time
VDS=300V,
ID=7A,
RG=25Ω,
VGS=10V
--
26
--
nS
t
r
Turn-on Rise Time
--
17
--
nS
t
d(off)
Turn-off Delay Time
--
57
--
nS
t
f
Turn-off Fall Time
--
23
--
nS
Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated)
V
SD
Forward on voltage
IS=5A,VGS=0V
--
0.85
1.4
V