PT2301A
-20V/-3A P-Channel Enhancement Mode MOSFET
1
JinYu
www. htsemi. com V2.0
Semiconductor
2022/12
Features
• Advanced trench process technology
• High Density Cell Design For Ultra Low On-Resistance
Applications
•
PWM application
• Load switch
Order Information
Product
Package
Marking
Reel Size
Reel
Carton
PT2301A
SOT-23-3L
A1sHB
7inch
3000PCS
180000PCS
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
V
(BR)DSS
Drain-Source Breakdown Voltage
-20
V
V
GS
Gate-Source Voltage
±10
V
TJ
Maximum Junction Temperature
150
°C
TSTG
Storage Temperature Range
-55 to 150
°C
IS
Diode Continuous Forward Current
TA
=25°C
-3
A
Mounted on Large Heat Sink
IDM
Pulse Drain Current Tested (Sillicon Limit) (Note1)
TA
=25°C
-10
A
ID
Continuous Drain current
TA
=25°C
-3
A
PD
Maximum Power Dissipation
TA
=25°C
1.25
W
RθJA
Thermal Resistance Junction−to−Ambient (Note2)
100
°C/W
BVDSS
-20
V
ID
-3
A
RDSON@VGS=-4.5V
60
mΩ
RDSON@VGS=-2.5V
75
mΩ
SOT-23-3L
PT2301A
-20V/-3A P-Channel Enhancement Mode MOSFET
2
JinYu
www. htsemi. com V2.0
Semiconductor
2022/12
Note:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec
3. Pulse Test: pulse width ≤ 300 us, duty cycle ≤ 2%.
4.
Guaranteed by design, not subject to production testing.
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
V
(BR)DSS
Drain- Source Breakdown Voltage
VGS=0V ID=-250μA
-20
--
--
V
I
DSS
Zero Gate Voltage Drain current
VDS=-20V,VGS=0V
--
--
-1
μA
I
GSS
Gate-Body Leakage Current
VGS=±10V,VDS=0V
--
--
±100
uA
V
GS(TH)
Gate Threshold Voltage
VDS=VGS,ID=-250μA
-0.4
--
-1
V
R
DS(ON)
Drain-Source On-State Resistance (Note3)
VGS=-4.5V, ID=-3A
--
60
95
mΩ
VGS=-2.5V, ID=-2A
--
75
140
mΩ
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) (Note4)
C
iss
Input Capacitance
VDS= -6V,
VGS=0V,
F=1MHz
--
415
--
pF
C
oss
Output Capacitance
--
223
--
pF
C
rss
Reverse Transfer Capacitance
--
87
--
pF
Q
g
Total Gate Charge
VDS= -6V,
ID= -2.3A,
VGS= -4.5V
--
5.8
--
nC
Q
gs
Gate-Source Charge
--
0.85
--
nC
Q
gd
Gate-Drain Charge
--
1.7
--
nC
Switching Characteristics (Note4)
t
d(on)
Turn-on Delay Time
VDD=-6V,
ID=-1A,
RL=6Ω,
RG=6Ω,
VGS=-4.5V
--
13
--
nS
t
r
Turn-on Rise Time
--
36
--
nS
t
d(off)
Turn-off Delay Time
--
42
--
nS
t
f
Turn-off Fall Time
--
34
--
nS
Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated)
V
SD
Forward on voltage (Note3)
IS=-1A,VGS=0V
--
--
-1.2
V